Browsing by author "Ajaykumar, Arjun"
Now showing items 1-7 of 7
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Erase behavior of charge trap flash memory devices using high-k dielectric as blocking oxide liner
Ramesh, Siva; Ajaykumar, Arjun; Bastos, Joao; Breuil, Laurent; Arreghini, Antonio; Nyns, Laura; Soulie, Jean-Philippe; Ragnarsson, Lars-Ake; Schleicher, Filip; Jossart, Nico; Stiers, Jimmy; Van den Bosch, Geert; Rosmeulen, Maarten (2020) -
First demonstration of ruthenium and molybdenum word lines integrated into 40nm ptch 3D NAND memory devices
Ajaykumar, Arjun; Breuil, Laurent; Katcko, Kostantine; Schleicher, Filip; Sebaai, Farid; Oniki, Yusuke; Ramesh, Siva; Arreghini, Antonio; Nyns, Laura; Soulie, Jean-Philippe; Stiers, Jimmy; Rosmeulen, Maarten; Van den Bosch, Geert (2021) -
Integration of Ruthenium-based Wordline in a 3-D NAND Memory Devices
Breuil, Laurent; El Hajjam, Gabriel; Ramesh, Siva; Ajaykumar, Arjun; Arreghini, Antonio; Zhang, Liping; Sebaai, Farid; Nyns, Laura; Raymaekers, Tom; Rosmeulen, Maarten; Van den Bosch, Geert; Furnemont, Arnaud (2020) -
Performance and reliability of ultra-thin HfO2-based RRAM (UTO-RRAM)
Govoreanu, Bogdan; Ajaykumar, Arjun; Lipowicz, Hubert; Chen, Yangyin; Liu, Jen-Chieh; Degraeve, Robin; Zhang, Leqi; Clima, Sergiu; Goux, Ludovic; Radu, Iuliana; Fantini, Andrea; Raghavan, Naga; Kar, Gouri Sankar; Kim, Woosik; Redolfi, Augusto; Wouters, Dirk; Altimime, Laith; Jurczak, Gosia (2013) -
Reliability of Mo as Word Line Metal in 3D NAND
Tierno, Davide; Croes, Kristof; Ajaykumar, Arjun; Ramesh, Siva; Van den Bosch, Geert; Rosmeulen, Maarten (2021) -
Understanding the kinetics of Metal Induced Lateral Crystallization process to enhance the poly-Si channel quality and current conduction in 3-D NAND memory
Ramesh, Siva; Vadakupudhu Palayam, Senthil; Ajaykumar, Arjun; Opsomer, Karl; Bastos, Joao; Ragnarsson, Lars-Ake; Breuil, Laurent; Arreghini, Antonio; Wouters, Lennaert; Spampinato, Valentina; Favia, Paola; Nalin Mehta, Ankit; Carolan, Patrick; Nyns, Laura; Katcko, Kostantine; Stiers, Jimmy; Van den Bosch, Geert; Rosmeulen, Maarten (2021) -
Understanding the Origin of Metal Gate Work Function Shift and Its Impact on Erase Performance in 3D NAND Flash Memories
Ramesh, Siva; Ajaykumar, Arjun; Ragnarsson, Lars-Ake; Breuil, Laurent; El Hajjam, Gabriel Khalil; Kaczer, Ben; Belmonte, Attilio; Nyns, Laura; Soulie, Jean-Philippe; van den Bosch, Geert; Rosmeulen, Maarten (2021)