Browsing by author "Waltl, M."
Now showing items 1-16 of 16
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A Comprehensive Cryogenic CMOS Variability and Reliability Assessment using Transistor Arrays
Grill, Alexander; Michl, J.; Diaz Fortuny, Javier; Beckers, Arnout; Bury, Erik; Vaisman Chasin, Adrian; Grasser, T.; Waltl, M.; Kaczer, Ben; De Greve, Kristiaan (2023) -
Advanced characterization of oxide traps: the dynamic time-dependent defect spectroscopy
Grasser, Tibor; Rott, K.; Reisinger, H.; Wagner, P.J.; Goes, W; Schanovsky, F.; Waltl, M.; Toledano Luque, Maria; Kaczer, Ben (2013) -
Characterization and modeling of charge trapping: From single defects to devices
Grasser, T.; Rzepa, G.; Waltl, M.; Goes, W.; Rott, K.; Rott, G.; Reisinger, H.; Franco, Jacopo; Kaczer, Ben (2014) -
Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors
Grasser, T.; Stampfer, B.; Waltl, M.; Rzepa, G.; Rupp, K.; Schanovsky, F.; Pobegen, G.; Puschkarsky, K.; Reisinger, H.; O'Sullivan, Barry; Kaczer, Ben (2018) -
COMPHY - A compact-physics framework for unified modeling of BTI
Rzepa, Gerhard; Franco, Jacopo; O'Sullivan, Barry; Subirats, Alexandre; Simicic, Marko; Hellings, Geert; Weckx, Pieter; Jech, M.; Knobloch, T.; Waltl, M.; Roussel, Philippe; Linten, Dimitri; Kaczer, Ben; Grasser, T. (2018) -
CV Stretch-Out Correction after Bias Temperature Stress: Work-function Dependence of Donor-/Acceptor-like Traps, Fixed Charges, and Fast States
Grasser, T.; O'Sullivan, Barry; Kaczer, Ben; Franco, Jacopo; Stampfer, B.; Waltl, M. (2021) -
Efficient physical defect model applied to PBTI in high-k stacks
Rzepa, G.; Franco, Jacopo; Subirats, Alexandre; Jech, M.; Vaisman Chasin, Adrian; Grill, A.; Waltl, M.; Knobloch, T.; Stampfer, B.; Chiarella, Thomas; Horiguchi, Naoto; Ragnarsson, Lars-Ake; Linten, Dimitri; Grasser, T.; Kaczer, Ben (2017) -
Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOS
Michl, J.; Grill, Alexander; Stampfer, B.; Waldhoer, D.; Schleich, C.; Knobloch, T.; Ioannidis, E.; Enichlmair, H.; Minixhofer, R.; Kaczer, Ben; Parvais, Bertrand; Govoreanu, Bogdan; Radu, Iuliana; Grasser, T.; Waltl, M. (2021) -
Hydrogen-related volatile defects as the possible cause for the recoverable component of NBTI
Grasser, T.; Rott, K.; Reisinger, H.; Waltl, M.; Wagner, P.; Schanovsky, F.; Goes, W.; Pobegen, G.; Kaczer, Ben (2013) -
Implications of gate-sided hydrogen release for post-stress degradation build-up after BTI stress
Grasser, T.; Waltl, M.; Puschkarsky, K.; Stampfer, B.; Rzepa, G.; Pobegen, G.; Reisinger, H.; Arimura, Hiroaki; Kaczer, Ben (2017) -
NBTI in nanoscale MOSFETs – The ultimate modeling menchmark
Grasser, T.; Rott, K.; Reisinger, H.; Waltl, M.; Schanovsky, F.; Kaczer, Ben (2014) -
Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures
Michl, J.; Grill, A.; Claes, D.; Rzepa, G.; Kaczer, B.; Linten, D.; Radu, I; Grasser, T.; Waltl, M. (2020) -
Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures
Michl, J.; Grasser, T.; Waltl, M.; Grill, Alexander; Bury, Erik; Tyaginov, Stanislav; Linten, Dimitri; Parvais, Bertrand; Kaczer, Ben; Radu, Iuliana (2020) -
Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors
Grill, Alexander; John, Valentin; Michl, J.; Beckers, Arnout; Bury, Erik; Tyaginov, Stanislav; Parvais, Bertrand; Vaisman Chasin, Adrian; Grasser, T.; Waltl, M.; Kaczer, Ben; Govoreanu, Bogdan (2022) -
The "permanent" component of NBTI revisited: saturation, degradation-reversal, and annealing
Grasser, T.; Waltl, M.; Rzepa, G.; Goes, W.; Wimmer, Y.; El-Sayed, A.-M.; Shluger, A. L.; Reisinger, H.; Kaczer, Ben (2016) -
The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release
Grasser, T.; Rzepa, G.; Stampfer, B.; Waltl, M.; Kaczer, Ben; O'Sullivan, Barry (2020)