Now showing items 1-4 of 4

    • Bulk properties of MOCVD-deposited HfO2 layers for high-k dielectric applications 

      Van Elshocht, Sven; Baklanov, Mikhaïl; Brijs, Bert; Carter, R.; Caymax, Matty; Carbonell, Laure; Claes, Martine; Conard, Thierry; Cosnier, Vincent; Date, Lucien; De Gendt, Stefan; Kluth, J.; Pique, Didier; Richard, Olivier; Vanhaeren, Danielle; Vereecke, Guy; Witters, Thomas; Zhao, Chao; Heyns, Marc (2004)
    • Issues, achievements and challenges towards intergration of high-k dielectrics 

      Heyns, Marc; Bender, Hugo; Caymax, Matty; Carter, R; Claes, Martine; Conard, Thierry; Boullart, Werner; De Gendt, Stefan; Degraeve, Robin; Deweerd, Wim; Groeseneken, Guido; Houssa, Michel; Kubicek, Stefan; Lujan, Guilherme; Nohira, H.; Pantisano, Luigi; Petry, Jasmine; Röhr, Erika; Vandervorst, Wilfried; Van Elshocht, Sven; Xu, Zhen; Zhao, Chao; Cartier, E.; Chen, J.; Cosnier, V.; Green, M.; Jang, S.E.; Kaushik, Vidya; Kerber, A.; Kluth, J.; Lin, S.; Tsai, Wilman; Young, Edward; Manabe, Y. (2002)
    • Physical characterisation of high-gate stacks 

      Vandervorst, Wilfried; Bender, Hugo; Conard, Thierry; Richard, Olivier; Zhao, Chao; Brijs, Bert; Caymax, Matty; De Gendt, Stefan; Cosnier, Vincent; Chen, Jerry; Kluth, J.; Cartier, Eduard; Green, Martin (2002)
    • Scalability of MOCVD-deposited Hafnium oxide 

      Van Elshocht, Sven; Carter, Richard; Caymax, Matty; Claes, Martine; Conard, Thierry; Date, Lucien; De Gendt, Stefan; Kaushik, Vidya; Kerber, Andreas; Kluth, J.; Lujan, Guilherme; Petry, Jasmine; Pique, Didier; Richard, Olivier; Rohr, Erika; Shimamoto, Yasuhiro; Tsai, Wilman; Heyns, Marc (2003)