Browsing by author "Jiang, Yu-Long"
Now showing items 1-6 of 6
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Comprehensive study of Ga Activation in Si, SiGe and Ge and 5 x 10-10 $Xcm2 contact resistivity achieved on Ga doped Ge using nanosecond laser activation
Wang, Linlin; Yu, Hao; Schaekers, Marc; Everaert, Jean-Luc; Franquet, Alexis; Douhard, Bastien; Date, Lucien; del Agua Borniquel, Jose Ignacio; Hollar, Kelly; Khaja, Fareen; Aderhold, Wolfgang; Mayur, Abhilash; Lee, J.Y.; van Meer, Hans; Mocuta, Dan; Horiguchi, Naoto; Collaert, Nadine; De Meyer, Kristin; Jiang, Yu-Long (2017) -
Lanthanum and lanthanum silicide contacts on N-Type silicon
Yu, Hao; Wang, Linlin; Schaekers, Marc; Everaert, Jean-Luc; Jiang, Yu-Long; Mocuta, Dan; Horiguchi, Naoto; Collaert, Nadine; De Meyer, Kristin (2017) -
Oxygen gettering cap to scavenge parasitic oxide interlayer in TiSi contacts
Yu, Hao; Schaekers, Marc; Wang, Linlin; Everaert, Jean-Luc; Jiang, Yu-Long; Mocuta, Dan; Horiguchi, Naoto; Collaert, Nadine; De Meyer, Kristin (2019-11) -
Sub-10-9 Ohm.cm2 contact resistivity on p-SiGe achieved by Ga doping and nanosecond laser activation
Everaert, Jean-Luc; Schaekers, Marc; Yu, Hao; Wang, Linlin; Hikavyy, Andriy; Date, Lucien; del Agua Borniquel, Jose Ignacio; Hollar, Kelly; Khaja, Fareen; Aderhold, Wolfgang; Mayur, Abhilash; Lee, JaeYoung; van Meer, Hans; Jiang, Yu-Long; De Meyer, Kristin; Mocuta, Dan; Horiguchi, Naoto (2017) -
TiO2/HfO2 bi-layer gate stacks grown by atomic layer deposition for germanium-based metal-oxide-semiconductor devices using GeOxNy passivation layer
Xie, Qi; Musschoot, Jan; Schaekers, Marc; Caymax, Matty; Delabie, Annelies; Lin, Dennis; Qu, Xin-Ping; Jiang, Yu-Long; Van den Berghe, Sven; Detavernier, Christophe (2011) -
TiSi(Ge) contacts formed at low temperature achieving around 2x10-9 $Xcm2 contact resistivities to p-SiGe
Yu, Hao; Schaekers, Marc; Zhang, Jian; Wang, Linlin; Everaert, Jean-Luc; Horiguchi, Naoto; Jiang, Yu-Long; Mocuta, Dan; Collaert, Nadine; De Meyer, Kristin (2017)