Browsing by author "Barbato, M."
Now showing items 1-3 of 3
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ESD-failure of E-mode GaN HEMTs: role of device geometry and charge trapping
Canato, E; Meneghini, M.; Nardo, A.; Masin, F.; Barbato, F.; Barbato, M.; Stockman, Arno; Banerjee, A.; Moens, P.; Zanoni, E.; Meneghesso, G. (2019) -
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: dependence on Mg-doping level
Rossetto, Isabella; Meneghini, Matteo; Canato, E.; Barbato, M.; Stoffels, Steve; Posthuma, Niels; Decoutere, Stefaan; Tallarico, Andrea; Meneghesso, Gaudenzio; Zanoni, Enrico (2017) -
Power GaN HEMT degradation: from time-dependent breakdown to hot-electron effects
Meneghini, Matteo; Barbato, A.; Borga, Matteo; De Santi, Carlos; Barbato, M.; Stoffels, Steve; Zhao, Ming; Posthuma, Niels; Decoutere, Stefaan; Haeberlen, Oliver; Detzel, Thomas; Meneghesso, Gaudenzio; Zanoni, Enrico (2018)