Browsing by author "Vantomme, Andre"
Now showing items 81-100 of 180
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High quality GdSi1.7 layers formed by high dose channeled implantation
Wu, Ming Fang; Vantomme, Andre; Pattyn, Hugo; Langouche, G.; Bender, Hugo (1996) -
Highly doped SiGe epitaxy in view of S/D applications
Rengo, Gianluca; Porret, Clément; Hikavyy, Andriy; Rosseel, Erik; Pourtois, Geoffrey; Vantomme, Andre; Loo, Roger (2020-09) -
Highly doped SiGe epitaxy in view of S/D applications
Rengo, Gianluca; Porret, Clément; Hikavyy, Andriy; Rosseel, Erik; Nakazaki, Nobuya; Pourtois, Geoffrey; Vantomme, Andre; Loo, Roger (2020-07) -
HREM characterization of ion beam synthesized ternary silicides in (111) silicon
Tavares, J.; Bender, Hugo; Wu, Ming Fang; Vantomme, Andre; Langouche, G.; Lin, Chia-Hui (1995) -
Impact of ammonium sulfide solution on electronic prperties and ambient stability of germanium surfaces: towards Ge-based microelectronic devices
Fleischmann, Claudia; Schouteden, Koen; Müller, Matthias; Hönicke, Philipp; Beckoff, Burkhard; Sioncke, Sonja; Boyen, Hans-Gerd; Meuris, Marc; Van Haesendonck, Chris; Temst, Kristiaan; Vantomme, Andre (2013) -
Increase responsivity in Ge1-xSnx QWs photodetectors
Shimura, Yosuke; Gencarelli, Federica; Vincent, Benjamin; Gassenq, Alban; Roelkens, Gunther; Van Campenhout, Joris; Vantomme, Andre; Loo, Roger (2013-03) -
Influence of activation annealing and silicidation process on dopant redistribution and pile-up at the NixSiy/SiO2 interface
Kmieciak, Malgorzata; Kittl, Jorge; Janssens, Tom; Lauwers, Anne; Vandervorst, Wilfried; Kottantharayil, Anil; Schram, Tom; Veloso, Anabela; Van Dal, Mark; Maex, Karen; Vantomme, Andre (2005-05) -
Influence of SiGe thickness on the Co/SiGe/Si solid state reaction
Alves Donaton, Ricardo; Jin, S.; Bender, Hugo; Maex, Karen; Vantomme, Andre; Langouche, G. (1999) -
Initial growth mechanism of atomic layer deposited TiN
Satta, Alessandra; Vantomme, Andre; Schuhmacher, Jorg; Whelan, Caroline; Sutcliffe, Victor; Maex, Karen (2004) -
International collaboration: the path to breakthroughs in (Si)GeSn material development
Loo, Roger; Caymax, Matty; Vantomme, Andre; Nakatsuka, Osamu; Zaima, Shigeaki (2016) -
Interplay between magnetocrystalline anisotropy and exchange bias in epitaxial CoO/Co films
Liu, Hao-Liang; Brems, Steven; Zeng, Yu-Jia; Temst, Kristiaan; Vantomme, Andre; Van Haesendonck, Chris (2016) -
Interplay between metallization and strain relaxation in epitaxial GeSn layers
Vantomme, Andre; Santos, N.; Van Stiphout, K.; Nakatsuka, Osamu; Masaki, A.; Shimura, Yosuke; Loo, Roger; Zaima, Shigeaku; De Tavernier, C,; Temst, Kristiaan; Comrie, C. M. (2014) -
Interplay between relaxation and Sn segregation during thermal annealing of GeSn strained layers
Comrie, C.M.; Mtshali, C.B.; Sechogela, P.T.; Santos, N.M.; Van Stiphout, K.; Loo, Roger; Vantomme, Andre (2016-10) -
Interplay between structural and magnetic properties of L10-FePt(001) thin films directly grown on MgO(001)
Laenens, Bart; Almeida, F.M.; Planckaert, Nikie; Temst, Kristiaan; Meersschaut, Johan; Vantomme, Andre; Rentenberger, C.; Rennhofer, Marcus; Sepiol, Bogdan (2009) -
Investigation of iridium as a gate electrode for deep sub-micron CMOS technology
Pawlak, M.A.; Schram, Tom; Maex, Karen; Vantomme, Andre (2003-11) -
Investigation of Ni fully silicided gates for sub-45 nm CMOS technologies
Kmieciak, Malgorzata; Kittl, Jorge; Chamirian, Oxana; Veloso, Anabela; Lauwers, Anne; Schram, Tom; Maex, Karen; Vantomme, Andre (2004-08) -
Investigations of the surface chemical composition and atomic structure of ex-situ sulfur passivated Ge(100)
Fleischmann, Claudia; Sioncke, Sonja; Schouteden, K.; Paredis, K.; Beckhoff, B.; Müller, M.; Kolbe, M.; Meuris, Marc; Van Haesendonck, C.; Temst, K.; Vantomme, Andre (2009) -
Ion beam sputtering of metals: From kinetic roughening to ripple formation
Skeren, Tomas; Vandervorst, Wilfried; Vantomme, Andre; Temst, Kristiaan (2010) -
Ion beam synthesis of heteroepitaxial erbium silicide layers
Wu, Ming Fang; Vantomme, Andre; Pattyn, H.; Langouche, G.; Bender, Hugo (1996) -
Ion beam synthesis of ternary phase CoFe-silicide in (111)Silicon
Tavares, J.; Bender, Hugo; Wu, Ming Fang; Vantomme, Andre; Langouche, G.; Lin, Chia-Hui (1995)