Browsing by author "Yoshida, N."
Now showing items 1-3 of 3
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Effective work function engineering for aggressively scaled planar and FinFET-based devices with high-k last replacement metal gate technology
Veloso, Anabela; Chew, Soon Aik; Higuchi, Yuichi; Ragnarsson, Lars-Ake; Simoen, Eddy; Schram, Tom; Witters, Thomas; Van Ammel, Annemie; Dekkers, Harold; Tielens, Hilde; Devriendt, Katia; Heylen, Nancy; Sebaai, Farid; Brus, Stephan; Favia, Paola; Geypen, Jef; Bender, Hugo; Phatak, Anup; Chen, M. S.; Lu, X.; Ganguli, S.; Lei, Y.; Tang, W.; Fu, X.; Gandikota, S.; Noori, A.; Brand, A.; Yoshida, N.; Thean, Aaron; Horiguchi, Naoto (2012-09) -
Effective work function engineering for aggressively scaled planar and multi-gate fin field-effect transistor-based devices with high-k last replacement metal gate technology
Veloso, Anabela; Chew, Soon Aik; Higuchi, Yuichi; Ragnarsson, Lars-Ake; Simoen, Eddy; Schram, Tom; Witters, Thomas; Van Ammel, Annemie; Dekkers, Harold; Tielens, Hilde; Devriendt, Katia; Heylen, Nancy; Sebaai, Farid; Brus, Stephan; Favia, Paola; Geypen, Jef; Bender, Hugo; Phatak, Anup; Chen, M. S.; Lu, X.; Ganguli, S.; Lei, Yu; Tang, W.; Fu, X.; Gandikota, S.; Noori, A.; Brand, A.; Yoshida, N.; Thean, Aaron; Horiguchi, Naoto (2013) -
Si/SiGe superlattice I/O finFETs in a vertically-stacked gate-all-around horizontal nanowire technology
Hellings, Geert; Mertens, Hans; Subirats, Alexandre; Simoen, Eddy; Schram, Tom; Ragnarsson, Lars-Ake; Simicic, Marko; Chen, Shih-Hung; Parvais, Bertrand; Boudier, Dimitri; Cretu, Bogdan; Machillot, Jerome; Pena, Vanessa; Sun, S.; Yoshida, N.; Kim, N.; Mocuta, Anda; Linten, Dimitri; Horiguchi, Naoto (2018)