Browsing by author "Munteanu, D."
Now showing items 1-6 of 6
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A simulation analysis of FIBL in decananometer double-gate MOSFETs with high-k gate dielectrics
Autran, J.L.; Munteanu, D.; Bescond, M.; Houssa, Michel; Said, A. (2005) -
Electrical characterization, modelling and simulation of MOS structures with high-k gate stacks
Autran, J.L.; Munteanu, D.; Houssa, Michel (2003) -
Electrical modeling and simulation of nanoscale MOS devices with a high-permittivity dielectric gate stack
Autran, J.L.; Munteanu, D.; Houssa, Michel; Bescond, M.; Garros, X.; Leroux, C. (2004) -
Electron transport through high-k dielectric barriers: A non-equilibrium Green's function (NEGF) study
Munteanu, D.; Autran, J.L.; Moreau, M.; Houssa, Michel (2009) -
Impact of high-k gate dielectrics on decananometer double-gate MOSFETs: gate-fringing field and parasitic charge effects
Munteanu, D.; Autran, J.L.; Bescond, M.; Houssa, Michel (2004) -
Investigation of capacitance-voltage characteristics in Ge /high-k MOS devices
Moreau, M.; Munteanu, D.; Autran, J.-L.; Bellenger, Florence; Mitard, Jerome; Houssa, Michel (2009)