Browsing by author "Mehta, Anshu"
Now showing items 1-8 of 8
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A 10 μm thick poly-SiGe gyroscope processed above 0.35 μm CMOS
Scheurle, A.; Fuchs, T.; Kehr, K.; Leinenbach, C.; Kronmueller, S.; Arias, A.; Ceballos, J.; Lagos, M.A.; Mora, J.-M.; Munoz, J.M.; Ragel, A.; Ramos, J.; Van Aerde, Steven; Spengler, J.; Mehta, Anshu; Verbist, Agnes; Du Bois, Bert; Witvrouw, Ann (2007-01) -
Determination of stress profile and optimization of stress gradient in PECVD poly-SiGe films
Molfese, Antonio; Mehta, Anshu; Witvrouw, Ann (2004) -
Novel high growth rate processes for depositing poly-SiGe structural layers at CMOS compatible temperatures
Mehta, Anshu; Gromova, Maria; Rusu, C.; Baert, Kris; Van Hoof, Chris; Witvrouw, Ann; Richard, Olivier (2004-01) -
Optimisation of PECVD poly-SiGe layers for MEMS post-processing on top of CMOS
Mehta, Anshu; Gromova, Maria; Czarnecki, Piotr; Baert, Kris; Witvrouw, Ann (2005) -
Poly-SiGe, a superb material for MEMS
Witvrouw, Ann; Gromova, Maria; Mehta, Anshu; Sedky, Sherif; De Moor, Piet; Baert, Kris; Van Hoof, Chris (2004) -
Processing of MEMS gyroscopes on top of CMOS ICs
Witvrouw, Ann; Mehta, Anshu; Verbist, Agnes; Du Bois, Bert; Van Aerde, Steven; Ramos-Martos, J.; Ceballos, J.; Ragel, A.; Mora, J.M.; Lagos, M.A.; Arias, A.; Hinojosa, J.M.; Spengler, J.; Leinenbach, C.; Fuchs, T.; Kronmüller, S. (2005-02) -
SIGEM, low temperature deposition of poly-SiGe MEMs structures on standard CMOS circuits
Ramos-Martos, Juan; Ceballos-Caceres, Joaquin; Ragel-Morales, Antonio; Mora=-Gutierrez, Jose Miguel; Arias-Drake, Alberto; Lagos-Florido, Miguel-ANgel; Munoz-Hinojosa, Jose Maria; Mehta, Anshu; Verbist, Agnes; Du Bois, Bert; Kehr, Kersten; Leinenbach, Christina; Van Aerde, Steven; Spengler, Jorg; Witvrouw, Ann (2005) -
The use of functionally graded poly-SiGe layers for MEMS applications
Witvrouw, Ann; Mehta, Anshu (2005)