Browsing by author "Brand, A."
Now showing items 1-3 of 3
-
15nm-WFIN high-performance low-defectivity strained-germanium pFinFETs with low temperature STI-last process
Mitard, Jerome; Witters, Liesbeth; Loo, Roger; Lee, Seung Hun; Sun, J.W.; Franco, Jacopo; Ragnarsson, Lars-Ake; Brand, A.; Lu, X.; Yoshido, N.; Eneman, Geert; Brunco, David; Vorderwestner, M.; Storck, P.; Milenin, Alexey; Hikavyy, Andriy; Waldron, Niamh; Favia, Paola; Vanhaeren, Danielle; Vanderheyden, Annelies; Richard, Olivier; Mertens, Hans; Arimura, Hiroaki; Sioncke, Sonja; Vrancken, Christa; Bender, Hugo; Eyben, Pierre; Barla, Kathy; Lee, Sun Ghil; Horiguchi, Naoto; Collaert, Nadine; Thean, Aaron (2014) -
Effective work function engineering for aggressively scaled planar and FinFET-based devices with high-k last replacement metal gate technology
Veloso, Anabela; Chew, Soon Aik; Higuchi, Yuichi; Ragnarsson, Lars-Ake; Simoen, Eddy; Schram, Tom; Witters, Thomas; Van Ammel, Annemie; Dekkers, Harold; Tielens, Hilde; Devriendt, Katia; Heylen, Nancy; Sebaai, Farid; Brus, Stephan; Favia, Paola; Geypen, Jef; Bender, Hugo; Phatak, Anup; Chen, M. S.; Lu, X.; Ganguli, S.; Lei, Y.; Tang, W.; Fu, X.; Gandikota, S.; Noori, A.; Brand, A.; Yoshida, N.; Thean, Aaron; Horiguchi, Naoto (2012-09) -
Effective work function engineering for aggressively scaled planar and multi-gate fin field-effect transistor-based devices with high-k last replacement metal gate technology
Veloso, Anabela; Chew, Soon Aik; Higuchi, Yuichi; Ragnarsson, Lars-Ake; Simoen, Eddy; Schram, Tom; Witters, Thomas; Van Ammel, Annemie; Dekkers, Harold; Tielens, Hilde; Devriendt, Katia; Heylen, Nancy; Sebaai, Farid; Brus, Stephan; Favia, Paola; Geypen, Jef; Bender, Hugo; Phatak, Anup; Chen, M. S.; Lu, X.; Ganguli, S.; Lei, Yu; Tang, W.; Fu, X.; Gandikota, S.; Noori, A.; Brand, A.; Yoshida, N.; Thean, Aaron; Horiguchi, Naoto (2013)