Browsing by author "Agarwal Kumar, Tarun"
Now showing items 1-16 of 16
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2D materials: roadmap to CMOS integration
Huyghebaert, Cedric; Schram, Tom; Smets, Quentin; Agarwal Kumar, Tarun; Verreck, Devin; Brems, Steven; Phommahaxay, Alain; Chiappe, Daniele; El Kazzi, Salim; Lockhart de la Rosa, Cesar Javier; Arutchelvan, Goutham; Cott, Daire; Ludwig, Jonathan; Gaur, Abhinav; Sutar, Surajit; Leonhardt, Alessandra; Marinov, Daniil; Lin, Dennis; Caymax, Matty; Asselberghs, Inge; Pourtois, Geoffrey; Radu, Iuliana (2018) -
Benchmarking of monolithic 3D integrated MX2 FETs with Si FinFETs
Agarwal Kumar, Tarun; Szabo, Aron; Garcia Bardon, Marie; Soree, Bart; Radu, Iuliana; Raghavan, Praveen; Luisier, Mathieu; Dehaene, Wim; Heyns, Marc (2017) -
Benchmarking of MoS2 FETs with multigate Si-FET options for 5 nm and beyond
Agarwal Kumar, Tarun; Yakimets, Dmitry; Raghavan, Praveen; Radu, Iuliana; Thean, Aaron; Heyns, Marc; Dehaene, Wim (2015) -
Bilayer graphene tunneling-FET for sub-0.2 V digital CMOS logic applications
Agarwal Kumar, Tarun; Nourbakhsh, Amirhasan; Raghavan, Praveen; Radu, Iuliana; Verhelst, Marian; De Gendt, Stefan; Heyns, Marc; Thean, Aaron (2014) -
Chemically enhanced double-gate bilayer graphene field-effect transistor with neutral channel for logic applications
Nourbakhsh, Amirhasan; Agarwal Kumar, Tarun; Klekachev, Alexander; Asselberghs, Inge; Cantoro, Mirco; Huyghebaert, Cedric; Heyns, Marc; Verhelst, Marian; Thean, Aaron; De Gendt, Stefan (2014-08) -
Comparison of short-channel effects in monolayer MoS2 based junctionless and inversion-mode field-effect transistors
Agarwal Kumar, Tarun; Soree, Bart; Radu, Iuliana; Raghavan, Praveen; Fiori, Gianluca; Iannaccone, Giuseppe; Thean, Aaron; Heyns, Marc; Dehaene, Wim (2016) -
Device-Circuit Co-Design of 2D Material Based Devices for Future Electronics
Agarwal Kumar, Tarun (2018-06) -
Effect of material parameters on two-dimensional materials based TFETs: an energy-delay perspective
Agarwal Kumar, Tarun; Radu, Iuliana; Raghavan, Praveen; Fiori, Gianluca; Thean, Aaron; Heyns, Marc; Dehaene, Wim (2016) -
Heterostructure at CMOS source/drain: contributor or alleviator to the high access resistance problem?
Yu, Hao; Schaekers, Marc; Rosseel, Erik; Everaert, Jean-Luc; Eyben, Pierre; Chiarella, Thomas; Merckling, Clement; Agarwal Kumar, Tarun; Pourtois, Geoffrey; Hikavyy, Andriy; Kubicek, Stefan; Witters, Liesbeth; Sibaja-Hernandez, Arturo; Mitard, Jerome; Waldron, Niamh; Chew, Soon Aik; Demuynck, Steven; Horiguchi, Naoto; Barla, Kathy; Thean, Aaron; Mocuta, Anda; Mocuta, Dan; Collaert, Nadine; De Meyer, Kristin (2016) -
Material selection and device design guidelines for two-dimensional materials based TFETs
Agarwal Kumar, Tarun; Soree, Bart; Radu, Iuliana; Raghavan, Praveen; Fiori, Gianluca; Heyns, Marc; Dehaene, Wim (2017) -
Material-device-circuit co-optimization of 2D material based FETs for ultra-scaled technology nodes
Agarwal Kumar, Tarun; Soree, Bart; Radu, Iuliana; Raghavan, Praveen; Iannaccone, Giuseppe; Fiori, Gianluca; Heyns, Marc; Dehaene, Wim (2017) -
Polarity-controllable 2-dimensional transistors: experimental demonstration and scaling opportunities
Resta, Giovanni; Balaji, Yashwanth; Agarwal Kumar, Tarun; Radu, Iuliana; Lin, Dennis; Catthoor, Francky; Gaillardon, PE; De Micheli, Nanni (2017) -
Scaling trends and performance evaluation of 2-dimensional polarity-controllable FETs
Resta, Giovanni; Agarwal Kumar, Tarun; Lin, Dennis; Radu, Iuliana; Catthoor, Francky; Gaillardon, Pierre-Emmanuel; Micheli, Giovanni (2017) -
Towards high-performance polarity-controllable FETs with 2D materials
Resta, Giovanni; Gonzalez, Jorge Romero; Balaji, Yashwanth; Agarwal Kumar, Tarun; Lin, Dennis; Catthoor, Francky; Radu, Iuliana; De Micheli, Giovanni; Gaillardon, Pierre-Emmanuel (2018) -
Tunneling transistors based on MoS2/MoTe2 Van der Waals heterostructures
Balaji, Yashwanth; Smets, Quentin; Lockhart de la Rosa, Cesar Javier; Lu, Augustin; Chiappe, Daniele; Agarwal Kumar, Tarun; Lin, Dennis; Huyghebaert, Cedric; Radu, Iuliana; Mocuta, Dan; Groeseneken, Guido (2017) -
Tunneling transistors based on MoS2/MoTe2 van der Waals heterostructures
Balaji, Yashwanth; Smets, Quentin; Lockhart de la Rosa, Cesar Javier; Lu, Augustin; Chiappe, Daniele; Agarwal Kumar, Tarun; Lin, Dennis; Huyghebaert, Cedric; Radu, Iuliana; Mocuta, Dan; Groeseneken, Guido (2018)