Browsing by author "Hyun, Sangjin"
Now showing items 1-5 of 5
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Electrical characterization of capacitors with AVD- deposited hafnium silicates as high-k gate dielectric
Van Elshocht, Sven; Weber, U.; Conard, Thierry; Kaushik, Vidya; Houssa, Michel; Hyun, Sangjin; Seitzinger, Bernard; Lehnen, Peer; Schuhmacher, M.; Lindner, J.; Caymax, Matty; De Gendt, Stefan; Heyns, Marc (2005) -
High-k dielectrics integration prospects
Kubicek, Stefan; Van Elshocht, Sven; Delabie, Annelies; Yamamoto, Kazuhiko; Beckx, Stephan; Claes, Martine; Van Hoornick, Nausikaa; Kwak, Dong Hwa; Hyun, Sangjin; Rothschild, Aude; Veloso, Anabela; Kottantharayil, Anil; Lujan, Guilherme; Kittl, Jorge; Lauwers, Anne; Kaushik, Vidya; Niwa, Masaaki; De Gendt, Stefan; Heyns, Marc; Jurczak, Gosia; Biesemans, Serge (2005) -
High-k gate stack engineering – towards meeting low standby power and high performance targets
De Gendt, Stefan; Brunco, David; Caymax, Matty; Conard, Thierry; Date, Lucien; Delabie, Annelies; Deweerd, Wim; Groeseneken, Guido; Houssa, Michel; Hyun, Sangjin; Kaushik, Vidya; Kubicek, Stefan; Maes, Jan; Pantisano, Luigi; Ragnarsson, Lars-Ake; Rohr, Erika; Schram, Tom; Shimamoto, Y.; Sleeckx, Erik; Vandervorst, Wilfried; Van Elshocht, Sven; Yamada, Naoki; Witters, Thomas; Zhao, Chao; Zimmerman, Paul; Heyns, Marc (2005) -
Selective epitaxial Si/SiGe growth for VT shift adjustment in high k pMOS devices
Loo, Roger; Sorada, Haruyuki; Inoue, Akira; Lee, B.C; Hyun, Sangjin; Jakschik, Stefan; Lujan, Guilherme; Hoffmann, Thomas Y.; Caymax, Matty (2007) -
Threshold voltage control in polysilicon or fully-silicided-Hf-based gate dielectric pMOSFETs using controlled lateral oxidation
Kaushik, Vidya; Rohr, Erika; Hyun, Sangjin; De Gendt, Stefan; Van Elshocht, Sven; Delabie, Annelies; Everaert, Jean-Luc; Veloso, Anabela; Brus, Stephan; Ragnarsson, Lars-Ake; Richard, Olivier; Caymax, Matty; Heyns, Marc (2005)