Browsing by author "Raskin, Jean-Pierre"
Now showing items 1-17 of 17
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Anisotropic vapor HF etching of silicon dioxide for Si microstructure release
Passi, Vikram; Sodervall, Ulf; Nilsson, Bengt; Petersson, Bengt; Hagberg, Mats; Krzeminski, Christophe; Dubois, Emmanuel; Du Bois, Bert; Raskin, Jean-Pierre (2012) -
Band gap reduction in highly-strained silicon beams predicted by first-principles theory and validated using photoluminescence spectroscopy
Roisin, Nicolas; Colla, Marie-Stephane; Scaffidi, Romain; Pardoen, Thomas; Flandre, Denis; Raskin, Jean-Pierre (2023) -
Band-to-band tunneling MOSCAPs for rapid TFET characterization
Smets, Quentin; Verhulst, Anne; Lin, Dennis; Verreck, Devin; Merckling, Clement; El Kazzi, Salim; Martens, Koen; Raskin, Jean-Pierre; Thean, Aaron; Heyns, Marc (2014) -
CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities
Yadav, Sachin; Cardinael, Pieter; Zhao, Ming; Vondkar Kodandarama, Komal; Peralagu, Uthayasankaran; Alian, Alireza; Khaled, Ahmad; Makovejev, Sergej; Ekoga, Enrique; Lederer, Dimitri; Raskin, Jean-Pierre; Parvais, Bertrand; Collaert, Nadine (2021) -
DC and RF characteristics of a 60-nm FinFET over a wide temperature range
Tinoco, Julio; Parvais, Bertrand; Mercha, Abdelkarim; Decoutere, Stefaan; Raskin, Jean-Pierre (2008) -
Extensive Electrical Characterization Methodology of Advanced MOSFETs Towards Analog and RF Applications
Kilchytska, Valeriya; Makovejev, Sergej; Nyssens, Lucas; Halder, Arka; Raskin, Jean-Pierre; Flandre, Denis; Kazemi Esfeh, Babak (2021) -
FinFETs perspectives for high-temperature applications
Kilchytska, Valeria; Flandre, Denis; Simon, Pascal; Raskin, Jean-Pierre; Parvais, Bertrand; Collaert, Nadine; Jurczak, Gosia (2007-09) -
Frequency variation of the small-signal output conductance of decananometer MOSFETs due to the substrate crosstalk
Kilchytska, Valeria; Pailloncy, G.; Lederer, Dimitri; Raskin, Jean-Pierre; Collaert, Nadine; Jurczak, Gosia; Flandre, Denis (2007-05) -
GaN-on-Porous Silicon for RF Applications
Scheen, Gilles; Tuyaerts, Romain; Cardinael, Pieter; Ekoga, Enrique; Aouadi, Khaled; Pavageau, Christophe; Rassekh, Amin; Nabet, Massinissa; Yadav, Sachin; Raskin, Jean-Pierre; Parvais, Bertrand; Emam, Mostafa (2023) -
High-frequency noise performance of 60-nm gate-length FinFETs
Raskin, Jean-Pierre; Pailloncy, Guillaume; Lederer, Dimitri; Danneville, Francois; Dambrine, Gilles; Decoutere, Stefaan; Mercha, Abdelkarim; Parvais, Bertrand (2008) -
Impact of field-induced quantum confinement on the onset of tunneling field-effect transistors: Experimental verification
Smets, Quentin; Verhulst, Anne; Martens, Koen; Lin, Dennis; El Kazzi, Salim; Verreck, Devin; Simoen, Eddy; Collaert, Nadine; Thean, Aaron; Raskin, Jean-Pierre; Heyns, Marc (2014) -
Modeling and Characterization of TSV-Induced Noise Coupling
Sun, Xiao; Rack, Martin; Van der Plas, Geert; Raskin, Jean-Pierre; Beyne, Eric (2018) -
Perspective of FinFETs for analog applications
Kilchytska, Valeria; Collaert, Nadine; Rooyackers, Rita; Lederer, Dimitri; Raskin, Jean-Pierre; Flandre, Denis (2004) -
Revised split C-V technique for mobility investigation in advanced devices
Kilchytska, Valeria; Lederer, Dimitri; Simon, P.; Collaert, Nadine; Raskin, Jean-Pierre; Flandre, Denis (2005) -
Simulation of the effect of microstructure on the elastic properties of copper interconnects
Wilson, Chris; Oila, A.; Sanderson, L.; Bull, S.; Raskin, Jean-Pierre; Croes, Kristof; Horsfall, A.; O'Neill, A.; Tokei, Zsolt; Beyer, Gerald (2010) -
Temperature dependence of frequency dispersion in III–V metal-oxide-semiconductor C-V and the capture/emission process of border traps
Vais, Abhitosh; Lin, Dennis; Dou, Chunmeng; Martens, Koen; Ivanov, Tsvetan; Xie, Qi; Tang, Fu; Givens, Michael; Maes, Jan; Collaert, Nadine; Raskin, Jean-Pierre; De Meyer, Kristin; Thean, Aaron (2015) -
Time Dependence of RF Losses in GaN-on-Si Substrates
Cardinael, Pieter; Yadav, Sachin; Zhao, Ming; Rack, Martin; Lederer, Dimitri; Collaert, Nadine; Parvais, Bertrand; Raskin, Jean-Pierre (2022-04-11)