Browsing by author "Strangio, Sebastiano"
Now showing items 1-4 of 4
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Microscopic origin of random telegraph noise fluctuations in aggressively scaled RRAM and its impact on read disturb variability
Raghavan, Naga; Degraeve, Robin; Fantini, Andrea; Goux, Ludovic; Strangio, Sebastiano; Govoreanu, Bogdan; Wouters, Dirk; Groeseneken, Guido; Jurczak, Gosia (2013) -
On the bipolar resistive-switching characteristics of Al2O3- and HfO2-based memory cells operated in the soft-breakdown regime
Goux, Ludovic; Raghavan, Naga; Fantini, Andrea; Nigon, Robin; Strangio, Sebastiano; Degraeve, Robin; Kar, Gouri Sankar; Chen, Yangyin; De Stefano, Francesca; Afanasiev, Valeri; Jurczak, Gosia (2014) -
Single defect discharge events in vertical-nanowire tunnel-FETs
Fiore, Anonio; Franco, Jacopo; Cho, Moon Ju; Crupi, Felice; Strangio, Sebastiano; Roussel, Philippe; Rooyackers, Rita; Collaert, Nadine; Linten, Dimitri (2017) -
Understanding the intrinsic characteristics and memory trade-offs of sub-μA filamentary RRAM operation
Goux, Ludovic; Fantini, Andrea; Degraeve, Robin; Raghavan, Naga; Nigon, Robin; Strangio, Sebastiano; Wouters, Dirk; Govoreanu, Bogdan; Chen, Yangyin; Komura, Masanori; De Stefano, Francesca; Afanasiev, Valeri; Jurczak, Gosia (2013)