Browsing by author "Nakabayashi, M."
Now showing items 1-20 of 38
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20-MeV alpha ray effects in AlGaAsP p-HEMTs
Ohyama, Hidenori; Simoen, Eddy; Claeys, Cor; Takami, Y.; Kobayashi, K.; Yoneoka, M.; Nakabayashi, M.; Hakata, T.; Takizawa, H. (2000) -
A model for the radiation degradation of polycrystalline silicon films
Ohyama, H.; Nakabayashi, M.; Takakura, K.; Simoen, Eddy; Takami, Y.; Claeys, Cor (2002) -
A study on radiation damage of IGBTs 2-MeV electrons at different temperatures
Nakabayashi, M.; Ohyama, H.; Hanano, N.; Kamiya, T.; Hirao, T.; Simoen, Eddy; Claeys, Cor (2004) -
A study on radiation damage of IGBTs by 2-MeV electrons at different irradiation temperatures
Nakabayashi, M.; Ohyama, H.; Hanano, N.; Kamiya, T.; Hirao, T.; Takakura, K.; Simoen, Eddy; Claeys, Cor (2004) -
Defect assessment of irradiated STI diodes
Ohyama, Hidenori; Hayama, Kiyoteru; Miura, T.; Simoen, Eddy; Claeys, Cor; Poyai, Amporn; Nakabayashi, M.; Kobayashi, K. (2001) -
Defect assessment of irradiated STI Diodes
Ohyama, Hidenori; Hayama, Kiyoteru; Miura, T.; Simoen, Eddy; Claeys, Cor; Poyai, Amporn; Nakabayashi, M.; Kobayashi, K. (2002) -
Degradation and recovery of AlGaAs/GaAs p-HEMT irradiated by high-energy particle
Ohyama, Hidenori; Simoen, Eddy; Kuroda, S.; Claeys, C.; Takami, Y.; Hakata, T.; Kobayashi, K.; Nakabayashi, M.; Sunaga, H. (2001) -
Effects of electron irradiation on IGBT devices
Ohyama, H.; Takakura, K.; Nakabayashi, M.; Hirao, T.; Onoda, S.; Kamiya, T.; Simoen, Eddy; Claeys, Cor (2003) -
Effects of electron irradiation on SiC Schottky diodes
Ohyama, H.; Takakura, K.; Watanabe, T.; Nishiyama, K.; Nakabayashi, M.; David, Marie-Laure; Simoen, Eddy; Claeys, Cor (2004) -
Effects of high temperature electron irradiation on trench-IGBT
Nakabayashi, M.; Ohyama, H.; Hanano, N.; Simoen, Eddy; Claeys, Cor; Takakura, K.; Iwata, T.; Kudou, T.; Yoneaka, M. (2005) -
Effects of irradiation induced lattice defects on standard trench and fine pattern trench IGBT characteristics
Nakabayashi, M.; Ohyama, H.; Kaneko, T.; Hanano, K.; Rafi, J.M.; Simoen, Eddy; Claeys, Cor (2009) -
Effects of mechanical stress on polycrystalline-silicon resistors
Nakabayashi, M.; Ohyama, Hidenori; Simoen, Eddy; Ikegami, M.; Claeys, Cor; Kobayashi, K.; Yoneoka, M.; Miyahara, K. (2002) -
Electron irradiation of IGBTs
Nakabayashi, M.; Iwata, T.; Ohyama, H.; Takakura, K.; Yoneoka, M.; Simoen, Eddy; Claeys, Cor (2004) -
Impact of high-energy particle irradiation on polycrystalline silicon films
Nakabayashi, M.; Ohyama, Hidenori; Simoen, Eddy; Claeys, C.; Tanaka, K.; Kobayashi, K.; Miyahara, K. (2001) -
Impact of induced lattice defects on performance degradation of AlGaAs/GaAs p-HEMTs
Hakata, T.; Ohyama, Hidenori; Kuroda, S.; Simoen, Eddy; Claeys, C.; Kudou, T.; Kobayashi, K.; Nakabayashi, M.; Yoneoka, M.; Takami, Y.; Sunaga, H.; Miyahara, K. (1999) -
Impact of neutron irradiation on optical performance of InGaAsP laser diodes
Ohyama, Hidenori; Simoen, Eddy; Claeys, Cor; Takami, Y.; Sunaga, H.; Yoneoka, M.; Nakabayashi, M.; Kobayashi, K.; Kudou, T. (2000) -
Influence of boron implantation dose on the mechanical stress in polycrystalline silicon films
Nakabayashi, M.; Ikegami, M.; Ohyama, Hidenori; Kobauashi, K.; Yoneoka, M.; Simoen, Eddy; Claeys, Cor; Takami, Y.; Sunaga, H.; Takizawa, H. (2000) -
Influence of mechanical stress on the electrical performance of polycrystalline-silicon resistors
Nakabayashi, M.; Ohyama, Hidenori; Kobayashi, K.; Yoneoka, M.; Simoen, Eddy; Claeys, C.; Takami, Y.; Sunaga, H.; Takizawa, H. (2000) -
Model for the radiation degradation of polycrystalline silicon films
Nakabayashi, M.; Ohyama, H.; Takakura, K.; Simoen, Eddy; Claeys, Cor (2003) -
Radiation damage in flash memory cells
Ohyama, Hidenori; Simoen, Eddy; Claeys, C.; Nakabayashi, M.; Kobayashi, K. (2001)