Browsing by author "Dao, T."
Now showing items 1-4 of 4
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Influence of the anneal conditions on arsenic activation during solid-phase epitaxial regrowth
Pawlak, Bartek; Duffy, Ray; Janssens, Tom; Vandervorst, Wilfried; Maex, Karen; Smith, A.J.; Cowern, N.E.B; Dao, T.; Tamminga, Y. (2005) -
Island growth in the atomic layer deposition of zirconium oxide and aluminium oxide on hydrogen-terminated silicon: growth mode modelling and transmission electron microscopy
Puurunen, Riikka; Vandervorst, Wilfried; Besling, Wim F. A.; Richard, Olivier; Bender, Hugo; Conard, Thierry; Zhao, Chao; Delabie, Annelies; Caymax, Matty; De Gendt, Stefan; Heyns, Marc; Viitanen, M.M.; De Ridder, M.; Brongersma, Hidde; Tamminga, Y.; Dao, T.; de Win, T.; Verheijen, M.; Kaiser, M.; Tuominen, M. (2004) -
Self-aligned PtSi fully silicided (FUSI) metal gates for 45 nm CMOS applications
Van Dal, Mark; Lauwers, Anne; Cunniffe, John; Verbeeck, Rita; Vrancken, Christa; Demeurisse, Caroline; Dao, T.; Tamminga, Y.; Veloso, Anabela; Kittl, Jorge; Maex, Karen (2005-05) -
Tantalum-based gate electrode metals for advanced CMOS devices
Hooker, Jacob; Lander, Rob; Cubaynes, Florence; Schram, Tom; Roozeboom, F.; van Zijl, J.; Maas, M.; van den Heuvel, F.C.; Naburgh, E.; van Berkum, J.G.M.; Tamminga, Y.; Dao, T.; Henson, Kirklen; Schaekers, Marc; Van Ammel, Annemie; Tokei, Zsolt; Demand, Marc; Dachs, C. (2005)