Browsing by author "Vexler, Mikhail"
Now showing items 1-7 of 7
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Analysis of the features of hot-carrier degradation in FinFETs
Makarov, Alexander; Tyaginov, Stanislav; Kaczer, Ben; Jech, Markus; Vaisman Chasin, Adrian; Grill, Alexander; Hellings, Geert; Vexler, Mikhail; Linten, Dimitri; Grasser, Tibor (2018-10) -
Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range
Tyaginov, Stanislav; Bury, Erik; Grill, Alexander; Yu, Zhuoqing; Makarov, Alexander; De Keersgieter, An; Vexler, Mikhail; Vandemaele, Michiel; Wang, Runsheng; Spessot, Alessio; Vaisman Chasin, Adrian; Kaczer, Ben (2023) -
Impact of the device geometric parameters on hot-carrier degradation in FinFETs
Tyaginov, Stanislav; Makarov, Alexander; Kaczer, Ben; Jech, Markus; Vaisman Chasin, Adrian; Grill, Alexander; Hellings, Geert; Vexler, Mikhail; Linten, Dimitri; Grasser, Tibor (2018) -
On Superior Hot Carrier Robustness of Dynamically-Doped Field-Effect-Transistors
Tyaginov, Stanislav; Afzalian, Aryan; Makarov, Alexander; Grill, Alexander; Vandemaele, Michiel; Cherenev, Maksim; Vexler, Mikhail; Hellings, Geert; Kaczer, Ben (2022) -
Physical principles of self-consistent simulation of the generation of interface states and the transport of hot charge carriers in field-effect transistors based on metal–oxide–semiconductor structures
Tyaginov, Stanislav; Makarov, Alexander; Jech, Markus; Vexler, Mikhail; Franco, Jacopo; Kaczer, Ben; Grasser, Tibor (2018-02) -
Structure, electronic properties, and energetics of oxygen vacancies in varying concentrations of SixGe1-xO2
El-Sayed, Al-Moatasem; Jech, Markus; Waldhoer, Dominic; Makarov, Alexander; Vexler, Mikhail, I; Tyaginov, Stanislav (2022) -
Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors
Tyaginov, Stanislav; Makarov, Alexander; El-Sayed, Al-Moatasem Bellah; Vaisman Chasin, Adrian; Bury, Erik; Jech, Markus; Vandemaele, Michiel; Grill, Alexander; De Keersgieter, An; Vexler, Mikhail; Eneman, Geert; Kaczer, Ben (2022)