Browsing by author "de Jaeger, J.C."
Now showing items 1-15 of 15
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AlN on nanocrystalline diamond piezoelectric cantilevers for sensors/actuators
Mortet, Vincent; Soltani, A.; Talbi, A.; Pobedinskas, P.; Haenen, Ken; de Jaeger, J.C.; Pernod, P.; Wagner, Patrick (2009) -
Design, fabrication and physical analysis of TiN/AlN deep UV photodiodes
Barkad, H.A.; Soltani, A.; Mattalah, M.; Gerbedoen, J.C.; Rousseau, M.; de Jaeger, J.C.; Benmoussa, A.; Mortet, Vincent; Haenen, Ken; Benbakhti, B.; Moreau, M.; Dupuis, R.; Ougazzaden, A. (2010) -
Evolution de caractéristiques statiques de HEMTs AlGaN/GaN soumis à un stress électrique réalisé à differentes températures
Boudart, B.; Llibre, J.F.; Briand, D.; Tala-Ighil, B.; Toutah, H.; Guhel, Y.; de Jaeger, J.C.; Bougrioua, Z.; Germain, Marianne; Moerman, Ingrid (2003) -
First results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant-isolation technology
Werquin, M.; Vellas, N.; Guhel, Y.; Ducatteau, D.; Boudart, B.; Pesant, J.C.; Bougrioua, Z.; Germain, Marianne; de Jaeger, J.C.; Gaquiere, C. (2005) -
Grain size tuning of nanocrystalline chemical vapor deposited diamond by continuous electrical bias growth: Experimental and theoretical study
Mortet, V.; Zhang, L.; Eckert, M.; D'Haen, Jan; Soltani, A.; Moreau, M.; Troadec, D.; Neyts, E.; de Jaeger, J.C.; Verbeeck, J.; Bogaerts, A.; Van Tendeloo, G.; Haenen, Ken; Wagner, Patrick (2012) -
High power and linearity performances of gallium nitride HEMT devices on sapphire substrate
Werquin, W.; Gaquiere, C.; Guhel, Y.; Vellas, N.; Theron, D.; Boudart, B.; Hoel, V.; Germain, Marianne; de Jaeger, J.C.; Delage, S. (2005) -
High power performances of AlGaN/GaN HEMTs on Sapphire Substrate at Ft=4GHz
Vellas, N.; Gaquire, C.; Guhel, Y.; Werquin, M.; Ducatteau, D.; Boudart, B.; de Jaeger, J.C.; Bougrioua, Z.; Germain, Marianne; Leys, Maarten; Moerman, Ingrid; Borghs, Gustaaf (2002) -
Improvement of AlN SAW performance by introduction of TiN nucleation layer on silicon substrate
Soltani, A.; Talbi, A.; Mortet, Vincent; Bassam, A.; Oussous, A.; Monroy, E.; Haenen, Ken; de Jaeger, J.C.; Pernod, P. (2010) -
Influence d'une passivation précédée d'un traitement de surface sur le comportement électrique en regime statique d'un HEMT AlGaN/GaN
Guhel, Y.; Boudart, B.; Vellas, N.; Gaquiere, C.; Delos, E.; Ducateau, D.; Bougrioua, Z.; Germain, Marianne; de Jaeger, J.C. (2003) -
Investigations of Lamb acoustic wave devices based on AlN/Diamond thin multilayers
Soltani, A.; Talbi, A.; Mortet, Vincent; de Jaeger, J.C.; Haenen, Ken; Pernod, P. (2009) -
Microwave performances on gallium nitride based HEMT devices
Gaquiere, C.; Vellas, N.; Werquin, M.; Ducatteau, D.; Delos, E.; Chartier, E.; Lancereau, D.; Gerard, H.; Di Forte-Poisson, M.A.; Cordier, Y.; Germain, Marianne; Morvan, E.; Grimbert, B.; Caillas, N.; Hoel, V.; Theron, D.; Aubry, R.; Jacquet, J.C.; de Jaeger, J.C.; Delage, S.L. (2004) -
New developments on diamond photodetector for VUV solar observations
Benmoussa, A.; Soltani, A.; Haenen, Ken; Kroth, U.; Mortet, V.; Barkad, H.A.; Bolsee, D.; Hermans, C.; Richter, M.; de Jaeger, J.C.; Hochedez, J.F. (2008) -
Premiers résultats de puissance à 4GHz obtenus sur HEMTs AlGaN/GaN en technologie planar
Vellas, N.; Guhel, Y.; Gaquiere, C.; Boudart, B.; Pesant, J.C.; Bougrioua, Z.; Germain, Marianne; de Jaeger, J.C. (2003) -
Properties of diamond films grown by MWPECVD with DC substrate bias
Mortet, Vincent; Zhang, L.; Eckert, M.; D'Haen, Jan; Sotani, A.; Moreau, M.; Saitner, M.; Troadec, D.; Neyts, E.; de Jaeger, J.C.; Verbeeck, J.; Bogaerts, A.; Boyen, H.G.; Van Tendeloo, G.; Haenen, Ken; Wagner, Patrick (2010) -
Recent developments of wide-bandgap semiconductor based UV sensors
Benmoussa, A.; Soltani, A.; Schühle, U.; Haenen, Ken; Chong, Y.M.; Zhang, W.J.; Dahal, R.; Lin, J.Y.; Jiang, H.X.; Barkad, H.A.; BenMoussa, B.; Bolsee, D.; Hermans, C.; Kroth, U.; Laubis, C.; Mortet, Vincent; de Jaeger, J.C.; Giodanengo, B.; Richter, M.; Scholze, F.; Hochedez, J.F. (2009)