Browsing by author "Pireaux, J.J."

Effective attenuation length of Al Ka-excited Si2p photoelectrons in SiO2, Al2O3 and HfO2 thin films

Vitchev, R.G.; Defranoux, Chr; Wolstenholme, J; Conard, Thierry; Bender, Hugo; Pireaux, J.J. (2005)

Interfacial chemistry at high-k oxide layers on pretreated silicon wafers: XPS and TOF-SIMS study

Vitchev, R.; Conard, Thierry; Bender, Hugo; Houssiau, L.; Pireaux, J.J. (2004)

Multitechnique characterisation of Al203 thin layers deposited on SiO2/Si surface by atomic layer chemical vapour deposition

Houssiau, L.; Vitchev, R.G.; Pireaux, J.J.; Conard, Thierry; Bender, Hugo; Richard, Olivier; Mack, P.; Wolstenholme, J.; Defranoux, C. (2003)

Physical characterization of thin HfO2 layers by the combined analysis with complementary techniques

Bender, Hugo; Conard, Thierry; Richard, Olivier; Brijs, Bert; Petry, Jasmine; Vandervorst, Wilfried; Defranoux, C.; Boher, P.; Rochat, N.; Wyon, C.; Mack, P.; Wolstenholme, J.; Vitchev, R.; Houssiau, L.; Pireaux, J.J.; Bergmaier, A.; Dollinger, G. (2003)

Surface reactions on silanised tantalum pentoxide for biosensor realisation

Laureyn, Wim; De Palma, Randy; Frederix, Filip; Bonroy, Kristien; Friedt, Jean-Michel; Choi, Kang-Hoon; Campitelli, Andrew; Pireaux, J.J.; Maes, Guido (2002)

X-ray photoelectron spectroscopy characterisation of high-k dielectric Al2O3 and HfO2 layers deposited on SiO2/Si surface

Vitchev, R.G.; Pireaux, J.J.; Conard, Thierry; Bender, Hugo; Wolstenholme, J.; Defranoux, C. (2004)