Browsing by author "Shimura, Y."

Assessment of Ge1-xSnx alloys for strained Ge CMOS devices

Takeuchi, S.; Shimura, Y.; Nishimura, T.; Vincent, Benjamin; Eneman, Geert; Clarysse, Trudo; Demeulemeester, J.; Temst, K.; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Nakatsuka, O.; Sakai, A.; Zaima, S. (2010)

Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors

Vincent, Benjamin; Shimura, Y.; Takeuchi, Shotaro; Nishimura, T.; Eneman, Geert; Firrincieli, Andrea; Demeulemeester, Jelle; Vantomme, Andre; Clarysse, Trudo; Nakatsuka, O.; Zaima, S.; Dekoster, Johan; Caymax, Matty; Loo, Roger (2011)

Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors

Vincent, Benjamin; Shimura, Y.; Takeuchi, S.; Nishimura, T.; Demeulemeester, J.; Eneman, Geert; Clarysse, Trudo; Vantomme, Andre; Nakatsuka, O.; Zaima, S.; Dekoster, Johan; Caymax, Matty; Loo, Roger (2010)

Formation of Ni(Ge1-ySny)/Ge1-xSnx/Ge contact for Ge1-xSnx source/drain Stressor

Nishimura, T.; Nakatsuka, O.; Shimura, Y.; Takeuchi, S.; Vincent, Benjamin; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Zaima, S. (2010)

GeSn technology: impact of Sn on Ge CMOS applications

Zaima, S.; Nakatsuka, O.; Shimura, Y.; Adachi, M.; Nakamura, M.; Takeuchi, S.; Vincent, Benjamin; Gencarelli, Federica; Clarysse, Trudo; Demeulemeester, J.; Temst, K.; Vantomme, Andre; Caymax, Matty; Loo, Roger (2011)

GeSn Technology: Impact of Sn on Ge CMOS Applications

Zaima, S.; Natasuka, O.; Shimura, Y.; Takeuchi, S.; Vincent, Benjamin; Gencarelli, Federica; Clarysse, Trudo; Demeulemeester, J.; Temst, K.; Vantomme, Andre; Caymax, Matty; Loo, Roger (2011)

Impact of Sn on Ga activation in heteroepitaxial Ge1-xSnx layer

Shimura, Y.; Nakatsuka, O.; Vincent, Benjamin; Gencarelli, Federica; Clarysse, Trudo; Vandervorst, Wilfried; Caymax, Matty; Loo, Roger; Jensen, A.; Petersen, D.H.; Zaima, S. (2012)

In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates

Shimura, Y.; Takeuchi, Shotaro; Nakatsuka, O.; Vincent, Benjamin; Gencarelli, Federica; Clarysse, Trudo; Vandervorst, Wilfried; Caymax, Matty; Loo, Roger; Jensen, A.; Petersen, D. H.; Zaima, S. (2012)

MBE growth and crystalline properties of Ge1-xSnx heteroepitaxial layers

Shimura, Y.; Nakamura, M.; Asano, T.; Takeuchi, S.; Nakatsuka, O.; Vincent, Benjamin; Gencarelli, Federica; Clarysse, Trudo; Vandervorst, Wilfried; Caymax, Matty; Loo, Roger; Zaima, S. (2011-09)

Molecular beam deposition of Al2O3 on p-Ge(001)/Ge0.95Sn0.05 heterostructure and impact of a Ge-cap interfacial layer

Merckling, Clement; Sun, Xiao; Shimura, Y.; Franquet, Alexis; Vincent, Benjamin; Takeuchi, S.; Vandervorst, Wilfried; Nakastuka, O.; Zaima, S.; Loo, Roger; Caymax, Matty (2011)

Molecular beam passivation of Ge<Sn> compounds: surface, interface & gate stack studies

Merckling, Clement; Sun, X.; Shimura, Y.; Franquet, Alexis; Vincent, Benjamin; Takeuchi, Shotaro; Vandervorst, Wilfried; Nakatsuka, O.; Zaima, S.; Loo, Roger; Caymax, Matty (2011-09)

Towards an understanding of the atomic-scale surface properties of Ge1-xSnx films

Fleischmann, Claudia; Seidel, F.; Merckling, Clement; Vincent, Benjamin; Gencarelli, Federica; Loo, Roger; Shimura, Y.; Nakatsuka, O.; Zaima, S.; Caymax, Matty; Vandervorst, Wilfried; Temst, Kristiaan; Vantomme, Andre (2011-09)