Browsing by author "Agopian, Paula G. D."
Now showing items 1-15 of 15
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Analog Figures of Merit of Vertically Stacked Silicon Nanosheets nMOSFETs With Two Different Metal Gates for the Sub-7 nm Technology Node Operating at High Temperatures
Silva, Vanessa C. P.; Perina, Welder F.; Martino, Joao A.; Simoen, Eddy; Veloso, Anabela; Agopian, Paula G. D. (2021) -
Analysis of the ZTC-Point for Vertically Stacked Nanosheet pMOS Devices
Coelho, Carlos H. S.; Martino, Joao A.; Simoen, Eddy; Veloso, Anabela; Agopian, Paula G. D. (2021) -
Analysis of zero-temperature coefficient behavior on vertically stacked double nanosheet nMOS devices
Coelho, Carlos H. S.; Martino, Joao A.; Bellodi, Marcello; Simoen, Eddy; Veloso, Anabela; Agopian, Paula G. D. (2021) -
Design of operational transconductance amplifier with Gate-All-Around Nanosheet MOSFET using experimental data from room temperature to 200 degrees C
Sousa, Julia C. S.; Perina, Welder F.; Rangel, Roberto; Simoen, Eddy; Veloso, Anabela; Martino, Joao A.; Agopian, Paula G. D. (2022) -
Experimental Analysis of Trade-Off Between Transistor Efficiency and Unit Gain Frequency of Nanosheet NMOS Transistors
Silva, Vanessa C. P.; Martino, Joao A.; Simoen, Eddy; Veloso, Anabela; Agopian, Paula G. D. (2021) -
Experimental comparison between pMuGTFET and pFinFET analog performance as a function of temperature
Agopian, Paula G. D.; Martino, Joo Antonio; Rooyackers, Rita; Vandooren, Anne; Simoen, Eddy; Claeys, Cor (2013) -
Experimental study of MISHEMT from 450 K down to 200 K for analog applications
Perina, Welder F.; Martino, Joao Antonio; Simoen, Eddy; Peralagu, Uthayasankaran; Collaert, Nadine; Agopian, Paula G. D. (2023) -
High Temperature Influence on the Trade-off between gm/I-D and f(T) of nanosheet NMOS Transistors with Different Metal Gate Stack
Silva, Vanessa C. P.; Martino, Joao A.; Simoen, Eddy; Veloso, Anabela; Agopian, Paula G. D. (2021) -
Impact of gate current on the operational transconductance amplifier designed with nanowire TFETs
Nogueira, Alexandro de M.; Agopian, Paula G. D.; Simoen, Eddy; Rooyackers, Rita; Claeys, Cor; Collaert, Nadine; Martino, Joao A. (2021) -
Influence of the Ge amount at the source on transistor efficiency of vertical gate all around TFETs for different conduction regimes
Mendes Bordallo, Ciao Cesar; Sivieri, Victor B.; Martino, Joao Antonio; Agopian, Paula G. D.; Rooyackers, Rita; Vandooren, Anne; Simoen, Eddy; Thean, Aaron; Claeys, Cor (2016) -
Low frequency noise analysis and modeling in vertical tunnel FETs with Ge Source
Neves, Felipe; Agopian, Paula G. D.; Martino, Joao A.; Cretu, Bogdan; Rooyackers, Rita; Vandooren, Anne; Simoen, Eddy; Thean, Aaron; Claeys, Cor (2016) -
Operational Transconductance Amplifier Design with Gate- All-Around Nanosheet MOSFET using Experimental Lookup Table Approach
Sousa, Julia C. S.; Perina, Welder F.; Simoen, Eddy; Veloso, Anabela; Martino, Joao A.; Agopian, Paula G. D. (2021) -
Operational Transconductance Amplifier Designed with SiGe-source Nanowire Tunnel-FET using Experimental Lookup Table Model
Nogueira, Alexandro de M.; Agopian, Paula G. D.; Simoen, Eddy; Rooyackers, Rita; Claeys, Cor; Collaert, Nadine; Martino, Joao A. (2020) -
Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K
Perina, Welder F.; Martino, Joao A.; Simoen, Eddy; Peralagu, Uthayasankaran; Collaert, Nadine; Agopian, Paula G. D. (2023) -
Trade-off analysis between gm/I-D and f(T) of nanosheet NMOS transistors with different metal gate stack at high temperature
Silva, Vanessa C. P. A.; Martino, Joao A.; Simoen, Eddy; Veloso, Anabela; Agopian, Paula G. D. (2022)