Browsing by author "Grasser, Tibor"
Now showing items 1-20 of 143
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6Å EOT Si0.45Ge0.55 pMOSFET with optimized reliability (VDD=1V): Meeting the NBTI lifetime target at ultra-thin EOT
Franco, Jacopo; Kaczer, Ben; Eneman, Geert; Mitard, Jerome; Stesmans, Andre; Afanasiev, Valeri; Kauerauf, Thomas; Roussel, Philippe; Toledano-Luque, Maria; Cho, Moon Ju; Degraeve, Robin; Grasser, Tibor; Ragnarsson, Lars-Ake; Witters, Liesbeth; Tseng, Joshua; Takeoka, Shinji; Wang, Wei-E; Hoffmann, Thomas Y.; Groeseneken, Guido (2010) -
A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability
Kaczer, Ben; Franco, Jacopo; Weckx, Pieter; Roussel, Philippe; Putcha, Vamsi; Bury, Erik; Simicic, Marko; Vaisman Chasin, Adrian; Linten, Dimitri; Parvais, Bertrand; Catthoor, Francky; Rzepa, Gerhard; Waltl, Michael; Grasser, Tibor (2018) -
A Compact Physics Analytical Model for Hot-Carrier Degradation
Tyaginov, Stanislav; Grill, Alexander; Vandemaele, Michiel; Grasser, Tibor; Hellings, Geert; Makarov, Alexander; Jech, Markus; Linten, Dimitri; Kaczer, Ben (2020) -
A comprehensive model for correlated drain and gate current fluctuations
Goes, Wolfgang; Toledano Luque, Maria; Baumgartner, O.; Schanovsky, Frank; Kaczer, Ben; Grasser, Tibor (2013) -
A model for switching traps in amorphous oxides
Goes, Wolfgang; Grasser, Tibor; Karner, Markus; Kaczer, Ben (2009) -
A rigorous study of measurement techniques for negative bias temperature instability
Grasser, Tibor; Wagner, Paul-Jurgen; Hehenberger, Philipp; Gos, Wolfgang; Kaczer, Ben (2007-10) -
A two-stage model for negative bias temperature instability
Grasser, Tibor; Kaczer, Ben; Goes, Wolfgang; Aichinger, Thomas; Hehenberger, Philipp; Nelhiebel, M. (2009-04) -
Ab initio treatment of silicon-hydrogen bond rupture at Si/SiO2 interfaces
Jech, Markus; El-Sayed, Al-Moatasem; Tyaginov, Stanislav; Shluger, Alexander L; Grasser, Tibor (2019) -
Accelerated Capture and Emission (ACE) measurement pattern for efficient BTI characterization and modeling
Wu, Zhicheng; Franco, Jacopo; Claes, Dieter; Rzepa, Gerhard; Roussel, Philippe; Collaert, Nadine; Groeseneken, Guido; Linten, Dimitri; Grasser, Tibor; Kaczer, Ben (2019) -
Advanced characterization of oxide traps: the dynamic time-dependent defect spectroscopy
Grasser, Tibor; Rott, K.; Reisinger, H.; Wagner, P.J.; Goes, W; Schanovsky, F.; Waltl, M.; Toledano Luque, Maria; Kaczer, Ben (2013) -
Advanced modeling of oxide defects for random telegraph noise
Goes, Wolfgang; Schanovsky, Franz; Grasser, Tibor; Reisinger, Hans; Kaczer, Ben (2011-06) -
An energy-level perspective of bias temperature instability
Grasser, Tibor; Kaczer, Ben; Goes, Wolfgang (2008-04) -
Analysis of the features of hot-carrier degradation in FinFETs
Makarov, Alexander; Tyaginov, Stanislav; Kaczer, Ben; Jech, Markus; Vaisman Chasin, Adrian; Grill, Alexander; Hellings, Geert; Vexler, Mikhail; Linten, Dimitri; Grasser, Tibor (2018-10) -
Analytic modeling of the bias temperature instability using capture/emission time maps
Grasser, Tibor; Wagner, Paul-Jurgen; Reisinger, Hans; Aichinger, T.; Pobegen, G.; Nelhiebel, M.; Kaczer, Ben (2011-12) -
Analytical solution of the switching trap model for negative bias temperature stress
Bindu, B.; Goes, Wolfgang; Kaczer, Ben; Grasser, Tibor (2009) -
Applicability of charge pumping on Germanium MOSFETs
Martens, Koen; Kaczer, Ben; Grasser, Tibor; De Jaeger, Brice; Meuris, Marc; Maes, Herman; Groeseneken, Guido (2008) -
Assessing reliability of nano-scaled CMOS technologies one defect at a time
Kaczer, Ben; Grasser, Tibor; Franco, Jacopo; Toledano Luque, Maria; Weckx, Pieter; Roussel, Philippe; Groeseneken, Guido (2012) -
Atomistic approach to variability of bias-temperature instability in circuit simulations
Kaczer, Ben; Mahato, Swaraj; Valduga de Almeida Camargo, Vinicius; Toledano Luque, Maria; Roussel, Philippe; Grasser, Tibor; Catthoor, Francky; Dobrovolny, Petr; Zuber, Paul; Wirth, Gilson; Groeseneken, Guido (2011-04) -
'Atomistic' simulation of RTS amplitudes due to single and multiple charged defect states and their interactions
Bukhori, M. F.; Grasser, Tibor; Kaczer, Ben; Reisinger, Hans; Asenov, Asen (2010-10) -
Bi-modal variability of nFinFET characteristics during hot-carrier stress: a modeling approach
Makarov, Alexander; Kaczer, Ben; Vaisman Chasin, Adrian; Vandemaele, Michiel; Grill, Alexander; Hellings, Geert; El-Sayed, Al-Moatasem; Grasser, Tibor; Linten, Dimitri; Tyaginov, Stanislav (2019)