Browsing by author "Gaubas, E."
Now showing items 1-9 of 9
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Carrier lifetime dependence on doping, metal implants and excitation density in Ge and Si
Gaubas, E.; Vanhellemont, J.; Simoen, Eddy; Romandic, I.; Geens, W.; Clauws, P. (2007) -
Carrier lifetime studies in diode structures on Si substrates with and without Ge doping
Uleckas, A.; Gaubas, E.; Rafi, J.M.; Chen, J.; Yang, D.; Ohyama, H.; Simoen, Eddy; Vanhellemont, J. (2011) -
Electrical and opical characterization of thin semiconductor layers for advanced ULSI devices
Simoen, Eddy; Claeys, Cor; Gaubas, E.; Rafi, J.M. (2005) -
Excess carrier dynamics in SiGe ultra-thin layers
Gaubas, E.; Uleckas, A.; Simoen, Eddy (2005) -
Extraction of the carrier generation and recombination lifetime from the forward characteristics of advanced diodes
Poyai, Amporn; Simoen, Eddy; Claeys, Cor; Gaubas, E.; Huber, A.; Gräf, D. (2003) -
On the electrical activity of misfit and threading dislocations in P-N junctions fabricated in thin strain-relaxed buffer layers
Simoen, Eddy; Eneman, Geert; Shamuilia, Sheron; Simons, Veerle; Gaubas, E.; Delhougne, Romain; Loo, Roger; De Meyer, Kristin; Claeys, Cor (2005) -
On the impact of metal impurities on the carrier lifetime in n-type germanium
Gaubas, E.; Vanhellemont, J.; Simoen, Eddy; Theuwis, A.; Clauws, P. (2007) -
On the recombination activity of oxygen precipitation related lattice defects in silicon
Vanhellemont, Jan; Kaniava, Arvydas; Libezny, Milan; Simoen, Eddy; Kissinger, G.; Gaubas, E.; Claeys, C.; Clauws, P. (1995) -
Study of recombination characteristics in MOCVD grown GaN epi-layers on Si
Gaubas, E.; Cepirus, T.; Dobrovoliskas, D.; Malinauskas, T.; Meskauskaite, D.; Miosojedovas, S.; Pavlov, J.; Rumbauskas, V.; Mickevicius, J.; Simoen, Eddy; Zhao, Ming (2017)