Browsing by author "Afanas'ev, V.V."
Now showing items 1-8 of 8
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Atomic layer deposition of HfO2 thin films on InxGa1-xAs
O'Mahony, A.; O'Connor, E.; Long, R.; Thomas, K.; Povey, I.M.; Hurley, P.K.; Pemble, M.E.; Brennan, B.; Hughes, G.; Brammertz, Guy; Afanas'ev, V.V. (2008) -
Atomic layer deposition of high-k dielectric layers on Ge and III-V MOS channels
Delabie, Annelies; Alian, AliReza; Bellenger, Florence; Brammertz, Guy; Brunco, David; Caymax, Matty; Conard, Thierry; Franquet, Alexis; Houssa, Michel; Sioncke, Sonja; Van Elshocht, Sven; van Hemmen, J.L.; Keuning, W.; Kessels, W.M.M.; Afanas'ev, V.V.; Stesmans, Andre; Heyns, Marc; Meuris, Marc (2008) -
Atomic layer deposition of high-k dielectric layers on Ge and III-V MOS channels
Delabie, Annelies; Caymax, Matty; Bellenger, Florence; Brammertz, Guy; Conard, Thierry; Houssa, Michel; Sioncke, Sonja; Van Elshocht, Sven; Heyns, Marc; Meuris, Marc; Brunco, David; van Hemmen, J.L.; Keuning, W.; Kessels, W.M.M.; Afanas'ev, V.V.; Stesmans, Andre (2008) -
Determination of interface energy band diagram between (100)Si and mixed Al-Hf oxides using internal electron photoemission
Afanas'ev, V.V.; Stesmans, Andre; Tsai, Wilman (2003) -
Effect of the composition on the bandgap width of high-k MexTiyOz (Me=Hf,Ta, Sr)
Wang, Wan-Chih; Badylevich, V.; Afanas'ev, V.V.; Stesmans, Andre; Popovici, Mihaela Ioana; Tomida, Kazuyuki; Menou, Nicolas; Kittl, Jorge; Lukosius, M.; Baristiran Kaynak, C.; Wenger, Ch. (2011) -
Electronic structure of GeO2-passivated interfaces of (100)Ge with Al2O3 and HfO2
Afanas'ev, V.V.; Stesmans, Andre; Delabie, Annelies; Bellenger, Florence; Houssa, Michel; Meuris, Marc (2008) -
Electronic structure of the interface of aluminum nitride with Si(100)
Badylevich, M.; Shamuilia, S.; Afanas'ev, V.V.; Stesmans, Andre; Fedorenko, Y.G.; Zhao, Chao (2008) -
Paramagnetic point defects at interfacial layer in biaxial tensile strained (100)Si/SiO2
Somers, P.; Stesmans, Andre; Afanas'ev, V.V.; Claeys, Cor; Simoen, Eddy (2008)