Browsing by author "Ma, X."
Now showing items 1-4 of 4
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An investigation of field reduction effect on NBTI parameter characterization and lifetime prediction using a constant field stress method
Zhou, L.; Bo, T.; Ji, Z.; Yang, H.; Xu, H.; Liu, Q.; Simoen, Eddy; Wang, X.; Ma, X.; Li, Y.; Yin, H.; Du, A.; Zhao, C.; Wang, W. (2020) -
Insights into the effect of TiN thickness scaling on DC and AC NBTI characteristics in replacement metal gate pMOSFETs
Zhou, L.; Liu, Q.; Yang, H.; Ji, Z.; Xu, H.; Tang, B.; Simoen, Eddy; Jiang, H.; Luo, Y.; Wang, X.; Ma, X.; Li, Y.; Luo, J.; Yin, H.; Zhao, C.; Wang, W. (2020) -
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability
Stoffels, Steve; Posthuma, Niels; Decoutere, Stefaan; Bakeroot, Benoit; Tallarico, Andrea Natale; Sangiorgi, Enrico; Fiegna, Claudio; Zheng, Jiaxin; Ma, X.; Borga, Matteo; Fabris, Elena; Meneghini, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio; Priesol, Juraj; Satka, Alexander (2019-04) -
Understanding frequency dependence of trap generation under AC negative bias temperature instability stress in Si p-FinFETs
Zhou, L.; Zhang, Q.; Yang, H.; Ji, Z.; Zhang, Z.; Liu, Q.; Xu, H.; Tang, B.; Simoen, Eddy; Ma, X.; Wang, X.; Li, Y.; Yin, H.; Luo, J.; Zhao, C.; Wang, W. (2020)