Browsing by author "Higashi, Yusuke"
Now showing items 1-6 of 6
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Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery
Bastos, Joao; O'Sullivan, Barry; Franco, Jacopo; Tyaginov, Stanislav; Truijen, Brecht; Vaisman Chasin, Adrian; Degraeve, Robin; Kaczer, Ben; Ritzenthaler, Romain; Capogreco, Elena; Dentoni Litta, Eugenio; Spessot, Alessio; Higashi, Yusuke; Yoon, Younggwang; Machkaoutsan, Vladimir; Fazan, Pierre; Horiguchi, Naoto (2022) -
Defect profiling in FEFET Si:HfO2 layers
O'Sullivan, Barry; Putcha, Vamsi; Izmailov, Roman; Afanas'ev, Valeri V.; Simoen, Eddy; Jung, Taehwan; Higashi, Yusuke; Degraeve, Robin; Truijen, Brecht; Kaczer, Ben; Ronchi, Nicolo; McMitchell, Sean; Banerjee, Kaustuv; Clima, Sergiu; Breuil, Laurent; Van den Bosch, Geert; Linten, Dimitri; Van Houdt, Jan (2020) -
Impact of Charge Trapping and Depolarization on Data Retention Using Simultaneous P-V and I-V in HfO2-Based Ferroelectric FET
Higashi, Yusuke; Ronchi, Nicolo; Kaczer, Ben; Alam, Md Nur Kutubul; O'Sullivan, Barry; Banerjee, Kaustuv; McMitchell, Sean; Breuil, Laurent; Walke, Amey; Van den Bosch, Geert; Linten, Dimitri; Van Houdt, Jan (2021) -
Impact of charge trapping on imprint and its recovery in HfO2 based FeFET
Higashi, Yusuke; Ronchi, Nicolo; Kaczer, Ben; Banerjee, Kaustuv; McMitchell, Sean; O'Sullivan, Barry; Clima, Sergiu; Minj, Albert; Celano, Umberto; Di Piazza, Luca; Suzuki, Masamichi; Linten, Dimitri; Van Houdt, Jan (2019) -
Investigation of imprint in FE-HfO2 and its recovery
Higashi, Yusuke; Kaczer, Ben; Verhulst, Anne; O'Sullivan, Barry; Ronchi, Nicolo; McMitchell, Sean; Banerjee, Kaustuv; Di Piazza, Luca; Suzuki, Masamichi; Linten, Dimitri; Van Houdt, Jan (2020) -
New insights into the imprint effect in FE-HfO and its recovery
Higashi, Yusuke; Florent, Karine; Subirats, Alexandre; Kaczer, Ben; Di Piazza, Luca; Clima, Sergiu; Ronchi, Nicolo; McMitchell, Sean; Banerjee, Kaustuv; Celano, Umberto; Suzuki, Masamichi; Linten, Dimitri; Van Houdt, Jan (2019)