Browsing by author "Jungemann, Christoph"
Now showing items 1-9 of 9
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Comparison of strained SiGe heterostructure-on-insulator (001) and (110) PMOSFETs: C–V characteristics, mobility, and ON current
Pham, Anh-Tuan; Zhao, Qing-Tai; Jungemann, Christoph; Meinerzhagen, Bernd; Soree, Bart; Pourtois, Geoffrey (2011) -
First–principles parameter–free modeling of n– and p–FET hot–carrier degradation
Jech, Markus; Tyaginov, Stanislav; Kaczer, Ben; Franco, Jacopo; Jabs, Dominic; Jungemann, Christoph; Waltl, Michael; Grasser, Tibor (2019) -
Impact of mixed negative bias temperature instability and hot carrier stress on MOSFET characteristics – Part II: theory
Jech, Markus; Ulmann, Bianka; Rzepa, Gerhard; Tyaginov, Stanislav; Grill, Alexander; Waltl, Michael; Jabs, Dominic; Jungemann, Christoph; Grasser, Tibor (2019) -
Mixed hot-carrier/bias temperature instability degradation regimes in full {VG, VD} bias space: implications and peculiarities
Jech, Markus; Rott, Gunnar; Reisinger, Hans; Tyaginov, Stanislav; Rzepa, Gerhard; Grill, Alexander; Jabs, Dominic; Jungemann, Christoph; Waltl, Michael; Grasser, Tibor (2020) -
Quantum Chemistry Treatment of Silicon-Hydrogen Bond Rupture by Nonequilibrium Carriers in Semiconductor Devices
Jech, Markus; El-Sayed, Al-Moatasem; Tyaginov, Stanislav; Waldhoer, Dominic; Bouakline, Foudhil; Saalfrank, Peter; Jabs, Dominic; Jungemann, Christoph; Waltl, Michael; Grasser, Tibor (2021-01) -
Quantum simulations of electrostatics in Si cylindrical junctionless nanowire nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientations
Pham, Anton; Soree, Bart; Magnus, Wim; Jungemann, Christoph; Meinerzhagen, Bernd; Pourtois, Geoffrey (2012) -
Quantum simulations of electrostatics in Si cylindrical nanowire pinch-off nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientations
Pham, Anton; Soree, Bart; Magnus, Wim; Jungemann, Christoph; Meinerzhagen, Bernd; Pourtois, Geoffrey (2011) -
Special Issue on "New Simulation Methodologies for Next-Generation TCAD Tools" Foreword
Jungemann, Christoph; Bonani, Fabrizio; Cea, Stephen M.; Gnani, Elena; Hong, Sung-Min; Jin, Seonghoon; Liu, Xiaoyan; Moroz, Victor; Verhulst, Anne (2021-11) -
TCAD simulation and development within the European DOTFIVE project on 500GHz SiGe:C HBT's
Al-Sa'di, Mahmoud; d'Alessandro, Vincenzo; Fregonese, Sebastien; Hong, S.-M; Jungemann, Christoph; Maneaux, Christell; Marano, I.; Pakfar, A.; Rinaldi, Niccolò; Sasso, Grazia; Schroter, Michael; Sibaja-Hernandez, Arturo; Tavernier, Clement; Wedel, Gerald (2010)