Browsing by author "Germain, Marianne"
Now showing items 41-60 of 129
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Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN HFETs by Si substrate removal
Visalli, Domenica; Van Hove, Marleen; Srivastava, Puneet; Derluyn, Joff; Das, Jo; Leys, Maarten; Degroote, Stefan; Cheng, Kai; Germain, Marianne; Borghs, Gustaaf (2010) -
Extreme ultraviolet Al(1-x)Ga(x)N photodetectors for future solar missions
Malinowski, Pawel; John, Joachim; Aparicio Alonso, Patricia; Lorenz, Anne; Cheng, Kai; Derluyn, Joff; Germain, Marianne; Borghs, Gustaaf; Mertens, Robert; Duboz, Jean Yves; Kroth, Udo; Richter, Matthias (2008) -
Field-effect saccharide sensing using AlGaN/GaN heterostructures and boronic acid based chemical receptors
Schuller, Tim A.; Kuball, Martin; Flower, Stephen E.; James, Tony D.; Fossey, John S.; Marcon, Denis; Das, Jo; Degroote, Stefan; Germain, Marianne; Sarua, Andrei (2011) -
First results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant-isolation technology
Werquin, M.; Vellas, N.; Guhel, Y.; Ducatteau, D.; Boudart, B.; Pesant, J.C.; Bougrioua, Z.; Germain, Marianne; de Jaeger, J.C.; Gaquiere, C. (2005) -
Flip chip mounting for improved thermal management of AlGaN/GaN HFETs
Ji, Hangfeng; Sarua, A.; Kuball, Martin; Das, Johan; Ruythooren, Wouter; Germain, Marianne; Borghs, Gustaaf (2005) -
Formation of V-grooves on the (Al,Ga)N surface as means of tensile stress relaxation
Cheng, Kai; Leys, Maarten; Degroote, Stefan; Bender, Hugo; Favia, Paola; Borghs, Gustaaf; Germain, Marianne (2012) -
GaN for RF power amplifier : challenges and opportunities from material to System-in-a-Package
Germain, Marianne; Das, Johan; Derluyn, Joff; Vandersmissen, Raf; De Raedt, Walter; Schreurs, Dominique; Ruythooren, Wouter; Xiao, Dongping; Borghs, Gustaaf (2005) -
GaN power amplifier design based on artificial neural network modelling
Xiao, Dongping; Schreurs, Dominique; De Raedt, Walter; Derluyn, Joff; Balachander, Krishnan; Viaene, John; Germain, Marianne (2007) -
GaN technology on high-resistivity Si-substrates for high-power-amplifiers
Das, Jo; Derluyn, Joff; Lorenz, Anne; Oprins, Herman; Xiao, Dongping; De Raedt, Walter; Cheng, Kai; Leys, Maarten; Degroote, Stefan; Germain, Marianne; Borghs, Gustaaf (2008) -
GaN-on-Si electronics
Germain, Marianne (2009) -
GaN-on-Si for power conversion
Germain, Marianne; Derluyn, Joff; Van Hove, Marleen; Medjdoub, Farid; Das, Jo; Marcon, Denis; Degroote, Stefan; Cheng, Kai; Leys, Maarten; Visalli, Domenica; Srivastava, Puneet; Geens, Karen; Viaene, John; Sijmus, Bram; Decoutere, Stefaan; Borghs, Gustaaf (2010) -
GaN-on-Si HEMT stress under high electric field condition
Marcon, Denis; Lorenz, Anne; Derluyn, Joff; Das, Jo; Medjdoub, Farid; Cheng, Kai; Degroote, Stefan; Leys, Maarten; Mertens, Robert; Germain, Marianne; Borghs, Gustaaf (2008) -
GaN-on-Si HEMT stress under high electric field condition
Marcon, Denis; Lorenz, Anne; Derluyn, Joff; Das, Jo; Medjdoub, Farid; Cheng, Kai; Degroote, Stefan; Leys, Maarten; Mertens, Robert; Germain, Marianne; Borghs, Gustaaf (2009) -
GaN-on-Si HEMTs Above 10 W/mm at 2 GHz together with high thermal stability at 325°C
Medjdoub, Farid; Marcon, Denis; Das, Jo; Derluyn, Joff; Cheng, Kai; Degroote, Stefan; Vellas, Nicolas; Gaquière, Christophe; Germain, Marianne; Decoutere, Stefaan (2010) -
GaN-on-Si power field effect transistors
Germain, Marianne; Derluyn, Joff; Van Hove, Marleen; Medjdoub, Farid; Das, Jo; Cheng, Kai; Degroote, Stefan; Leys, Maarten; Visalli, Domenica; Marcon, Denis; Geens, Karen; Viaene, John; Sijmus, Bram; Decoutere, Stefaan; Cartuyvels, Rudi; Borghs, Gustaaf (2010) -
GaN-on-Si to enter the power electronics and LEDs markets
Germain, Marianne (2009-09) -
Growth and characterization of unintentionally doped GaN grown on silicon(111) substrates
Leys, Maarten; Cheng, Kai; Derluyn, Joff; Degroote, Stefan; Germain, Marianne; Borghs, Gustaaf; Taylor, C.A.; Dawson, P. (2008) -
High breakdown voltage in AlGaN/GaN/AlGaN double heterostructures grown on 4 inch Si substrates
Visalli, Domenica; Van Hove, Marleen; Derluyn, Joff; Cheng, Kai; Degroote, Stefan; Leys, Maarten; Germain, Marianne; Borghs, Gustaaf (2009) -
High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AlN interlayers
Germain, Marianne; Leys, Maarten; Boeykens, Steven; Degroote, Stefan; Wang, Wenfei; Schreurs, Dominique; Ruythooren, Wouter; Choi, Kang-Hoon; Van Daele, B.; Van Tendeloo, G.; Borghs, Gustaaf (2004-12) -
High performance GaN field-effect-transistors grown by MOVPE with in-situ Si3N4 surface passivation
Germain, Marianne; Derluyn, Joff; Xiao, Dongping; Vandersmissen, Raf; Das, Johan; Wang, Wenfei; Boeykens, Steven; Leys, Maarten; Degroote, Stefan; Ruythooren, Wouter; Borghs, Gustaaf (2004)