Browsing by author "Nakamura, H."
Now showing items 1-7 of 7
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12-EUV layer Surrounding Gate Transistor (SGT) for vertical 6-T SRAM: 5-nm-class technology for ultra-density logic devices
Kim, Min-Soo; Harada, N.; Kikuchi, Yoshiaki; Boemmels, Juergen; Mitard, Jerome; Huynh Bao, Trong; Matagne, Philippe; Tao, Zheng; Li, Waikin; Devriendt, Katia; Ragnarsson, Lars-Ake; Lorant, Christophe; Sebaai, Farid; Porret, Clément; Rosseel, Erik; Dangol, Anish; Batuk, Dmitry; Martinez Alanis, Gerardo Tadeo; Geypen, Jef; Jourdan, Nicolas; Sepulveda Marquez, Alfonso; Puliyalil, Harinarayanan; Jamieson, Geraldine; van der Veen, Marleen; Teugels, Lieve; El-Mekki, Zaid; Altamirano Sanchez, Efrain; Li, Y.; Nakamura, H.; Mocuta, Dan; Matsuoka, F. (2019) -
DTCO and TCAD for a 12 layer-EUV ultra-scaled surrounding gate transistor 6T-SRAM
Matagne, Philippe; Nakamura, H.; Kim, Min-Soo; Kikuchi, Yoshiaki; Huynh Bao, Trong; Tao, Zheng; Li, Waikin; Devriendt, Katia; Ragnarsson, Lars-Ake; Boemmels, Juergen; Mallik, Arindam; Altamirano Sanchez, Efrain; Sebaai, Farid; Lorant, Christophe; Jourdan, Nicolas; Porret, Clément; Mocuta, Dan; Harada, N.; Matsuoka, F. (2018) -
Effects of electron and proton radiation on embedded SiGe source/drain diodes
Ohyama, H.; Nagano, T.; Takakura, K.; Motoki, M.; Matsuo, M.; Nakamura, H.; Sawada, M.; Midorikawa, M.; Kuboyama, S.; Bargallo Gonzalez, Mireia; Simoen, Eddy; Claeys, Cor (2008) -
Effects of electron irradiation on SiGe devices
Ohyama, Hidenori; Nagano, T.; Takakura, K.; Motoki, M.; Matsuo, K.; Nakamura, H.; Sawada, M.; Kuboyama, S.; Bargallo Gonzalez, Mireia; Simoen, Eddy; Eneman, Geert; Claeys, Cor (2010) -
Interconnects for scaled SRAM with vertical Surrounded Gate Transistors (SGT)
Boemmels, Juergen; Harada, N.; Kim, Min-Soo; Mitard, Jerome; Kikuchi, Yoshiaki; Li, Waikin; Tao, Zheng; Puliyalil, Harinarayanan; Devriendt, Katia; Lorant, Christophe; Le, Quoc Toan; Kesters, Els; Jourdan, Nicolas; El-Mekki, Zaid; Teugels, Lieve; van der Veen, Marleen; Li, Y.; Nakamura, H.; Mocuta, Dan; Masuoka, F. (2019) -
Radiation damage of Ge diodes and MOSFETs on Ge-on-Si substrates
Nakamura, H.; Nagano, T.; Sukizaki, H.; Sakamoto, K.; Takakura, K.; Ohyama, H.; Kuboyama, S.; Simoen, Eddy; Claeys, Cor (2008) -
Radiation damage of Ge-on-Si devices
Ohyama, H.; Sakamoto, K.; Sukizaki, H.; Takakura, K.; Hayama, K.; Motoki, M.; Matsuo, K.; Nakamura, H.; Sawada, M.; Midorikawa, M.; Kuboyama, S.; De Jaeger, Brice; Simoen, Eddy; Claeys, Cor (2008)