Browsing by author "Fahle, Dirk"
Now showing items 1-13 of 13
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650 V p-GaN gate power HEMTs on 200 mm engineered substrates
Geens, Karen; Li, Xiangdong; Zhao, Ming; Guo, Weiming; Wellekens, Dirk; Posthuma, Niels; Fahle, Dirk; Aktas, Ozgur; Odnoblyudov, Vlad; Decoutere, Stefaan (2019) -
Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication
Geens, Karen; Herwig, Hahn; Liang, Hu; Borga, Matteo; Cingu, Deepthi; You, Shuzhen; Marx, Matthias; Oligschlaeger, Robert; Fahle, Dirk; Heuken, Michael; Odnoblyudov, Vladimir; Aktas, Ozgur; Basceri, Cem; Decoutere, Stefaan (2021) -
Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processing
Filho Goncalez, Walter; Borga, Matteo; Geens, Karen; Cingu, Deepthi; Chatterjee, Urmimala; Banerjee, Sourish; Vohra, Anurag; Han, Han; Minj, Albert; Hahn, Herwig; Marx, Matthias; Fahle, Dirk; Bakeroot, Benoit; Decoutere, Stefaan (2023) -
Epitaxial buffer structures grown on 200 mm engineering substrates for 1200 V E-mode HEMT application
Vohra, Anurag; Geens, Karen; Zhao, Ming; Syshchyk, Olga; Hahn, Herwig; Fahle, Dirk; Bakeroot, Benoit; Wellekens, Dirk; Vanhove, Benjamin; Langer, Robert; Decoutere, Stefaan (2022) -
Epitaxial growth and characterization of P-GaN gated HEMT on compliant poly-AlN substrate for e-mode power devices
Guo, Weiming; Geens, Karen; Zhao, Ming; Behmenburg, Hannes; Fahle, Dirk; Odnoblyudov, Vlad; Basceri, Cem; Aktas, Ozgur; Decoutere, Stefaan (2018) -
Epitaxial growth by MOCVD on 200 mm engineered substrates for power devices & ICs beyond 650 V
Fahle, Dirk; Zhao, Ming; Geens, Karen; Li, Xiangdong; Wellekens, Dirk; Magnani, Alessandro; Amirifar, Nooshin; Bakeroot, Benoit; You, Shuzhen; Odnoblyudov, Vladimir; Aktas, Ozgur; Basceri, Cem; Marcon, Denis; Groeseneken, Guido; Decoutere, Stefaan; Hahn, Herwig; Heuken, Michael (2019) -
Growth and characterization of buffer structures for AlGaN/GaN-based heterostructure field effect transistors
Eickelkamp, Martin; Fahle, Dirk; Mauder, Christof; Saripalli, Yoga; Zhao, Ming; Liang, Hu; Kandaswamy, Prem Kumar; Posthuma, Niels; Heuken, Michael (2016) -
Growth and characterization of buffer structures for AlGaN/GaN-based heterostructure field effect transistors
Eickelkamp, Martin; Fahle, Dirk; Mauder, Christof; Saripalli, Yoga; Zhao, Ming; Liang, Hu; Kandaswamy, Prem Kumar; Heuken, Michael (2016) -
Growth and characterization of buffer structures for high power enhancement-mode AlGaN/GaN HEMT
Martin, Eickelkamp; Fahle, Dirk; Mauder, Christof; Zhao, Ming; Liang, Hu; Posthuma, Niels; Van Hove, Marleen; Heuken, Michael (2017) -
Integration of 650 V GaN power ICs on 200 mm engineered substrates
Li, Xiangdong; Geens, Karen; Wellekens, Dirk; Zhao, Ming; Magnani, Alessandro; Amirifar, Nooshin; Bakeroot, Benoit; You, Shuzhen; Fahle, Dirk; Hahn, Herwig; Heuken, Michael; Odnoblyudov, Vlad; Aktas, Ozgur; Basceri, Cem; Marcon, Denis; Groeseneken, Guido; Decoutere, Stefaan (2020) -
Integration of GaN power ICs on 200 mm engineered substrates
Li, Xiangdong; Geens, Karen; Wellekens, Dirk; Zhao, Ming; Magnani, Alessandro; Amirifar, Nooshin; Bakeroot, Benoit; You, Shuzhen; Fahle, Dirk; Hahn, Herwig; Odnoblyudov, Vlad; Aktas, Ozgur; Basceri, Cem; Marcon, Denis; Groeseneken, Guido; Decoutere, Stefaan (2020) -
p-GaN e-mode HEMT power device manufacturing on 200mm substrates using aixtron AIX G5+C MOCVD system
Liang, Hu; Posthuma, Niels; Eickelkamp, Martin; Fahle, Dirk; Van Hove, Marleen; Zhao, Ming; Decoutere, Stefaan; Langer, Robert (2016) -
Vertical GaN devices: Process and reliability
You, Shuzhen; Geens, Karen; Borga, Matteo; Liang, Hu; Hahn, Herwig; Fahle, Dirk; Heuken, Michael; Mukherjee, Kalparupa; De Santi, Carlo; Meneghini, Matteo; Zanoni, Enrico; Berg, Martin; Ramvall, Peter; Kumar, Ashutosh; Bjork, Mikael T.; Ohlsson, B. Jonas; Decoutere, Stefaan (2021)