Browsing by author "Puttarame Gowda, Pallavi"
Now showing items 1-4 of 4
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Forksheet FETs with Bottom Dielectric Isolation, Self-Aligned Gate Cut, and Isolation between Adjacent Source-Drain Structures
Mertens, Hans; Ritzenthaler, Romain; Oniki, Yusuke; Puttarame Gowda, Pallavi; Mannaert, Geert; Sebaai, Farid; Hikavyy, Andriy; Rosseel, Erik; Dupuy, Emmanuel; Peter, Antony; Vandersmissen, Kevin; Radisic, Dunja; Briggs, Basoene; Batuk, Dmitry; Geypen, Jef; Martinez Alanis, Gerardo Tadeo; Seidel, Felix; Richard, Olivier; Chan, BT; Mitard, Jerome; Dentoni Litta, Eugenio; Horiguchi, Naoto (2022) -
Isotropic Etches to Enable Forksheet FET Integration
Oniki, Yusuke; Mertens, Hans; Puttarame Gowda, Pallavi; Sebaai, Farid; Altamirano Sanchez, Efrain; Holsteyns, Frank; Horiguchi, Naoto (2021) -
Model-free measurement of lateral recess in gate-all-around transistors with micro hard-X-ray fluorescence
Bogdanowicz, Janusz; Oniki, Yusuke; Kenis, Karine; Puttarame Gowda, Pallavi; Mertens, Hans; Shamieh, Basel; Leon, Yonatan; Wormington, Matthew; Van der Meer, Juliette; Charley, Anne-Laure (2023) -
Selective Si Etchant for Gate-All-Around Transistors with Si1-xGex Channel
Harada, Ken; Suzuki, Tatsunobu; Asano, Mari; Kakeshita, Kan; Puttarame Gowda, Pallavi; Oniki, Yusuke; Altamirano Sanchez, Efrain (2021)