Browsing by author "Boissiere, Olivier"
Now showing items 1-3 of 3
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AVD and MOCVD TaCN-based films for gate metal applications on high-k gate dielectrics
Karim, Zia; Barbar, Ghassan; Boissiere, Olivier; Lehnen, Peer; Lohe, Christoph; Seidel, Tom; Adelmann, Christoph; Conard, Thierry; O'Sullivan, Barry; Ragnarsson, Lars-Ake; Schram, Tom; Van Elshocht, Sven; De Gendt, Stefan (2007-10) -
Growth of dysprosium-, scandium-, and hafnium-based third generation high-k dielectrics by atomic-vapor deposition
Adelmann, Christoph; Lehnen, Peer; Van Elshocht, Sven; Zhao, Chao; Brijs, Bert; Franquet, Alexis; Conard, Thierry; Roeckerath, Martin; Schubert, Jurgen; Boissiere, Olivier; Lohe, Christoph; De Gendt, Stefan (2007-10) -
Thermally-stable high effective work function TaCN and Ta2N films for pMOS metal gate applications
Adelmann, Christoph; Lehnen, Peer; Ragnarsson, Lars-Ake; Conard, Thierry; Franquet, Alexis; Chang, Vincent; Rohr, Erika; Meersschaut, Johan; Boissiere, Olivier; Lohe, Christoph; Schram, Tom; Van Elshocht, Sven; De Gendt, Stefan (2008)