Browsing by author "Vanalme, G. M."
Now showing items 1-3 of 3
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A ballistic electron emission microscopy (BEEM) study of the barrier height change of Au/n-GaAs Schottky barriers due to reactive ion etching
Vanalme, G. M.; Van Meirhaeghe, R. L.; Cardon, F.; Van Daele, Peter (1997) -
A ballistic electron emission microscopy (BEEM)-investigation of the effects of reactive ion etching (RIE) and of chemical pretreatment on III-V semiconductors
Van Meirhaeghe, R. L.; Vanalme, G. M.; Goubert, L.; Cardon, F.; Van Daele, P. (1997) -
A ballistic electron emission microscopy study of barrier height inhomogeneities introduced in Au/III-V semiconductor Schottky barrier contacts by chemical pretreatments
Vanalme, G. M.; Goubert, L.; Van Meirhaeghe, R. L.; Cardon, F.; Van Daele, Peter (1999)