Browsing by author "Fichtner, Paulo"
Now showing items 1-4 of 4
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Effects on the HE implantation energy on the strain relaxation of epitaxial Si0.8Ge0.2/Si(100) heterostructures
Morschbacher, Mario; da Silva, Douglas; Fichtner, Paulo; Zawislak, Fernando; Hollaender, Bernd; Luysberg, Martina; Mantl, Siegfried; Caymax, Matty; Loo, Roger (2004) -
Strain relaxation of SiGe/Si by He implantation: controlling dislocation sources at He precipitates
Huging, Norbert; Luysberg, Martina; Urban, Knut; Buca, Dan; Hollander, Bernd; Mantl, Siegfried; Morschbacher, Marcio; Fichtner, Paulo; Loo, Roger; Caymax, Matty (2005) -
Strain relaxation of SiGe/Si heterostructures by helium ionimplantation and subsequent annealing : Helium precipitates acting as dislocation sources
Hueging, Norbert; Luysberg, Martina; Urban, Knut; Buca, Dan; Hollaender, Bernd; Mantl, Siegfried; Morschbacher, Marcio; Fichtner, Paulo; Loo, Roger; Caymax, Matty (2005) -
The role of internal dislocation sources for the strain ralaxation of pseudomorphic SiGe/Si structures
Luysberg, Martina; Hueging, Norbert; Lenk, Steffi; Buca, Dan; Hollaender, Bernd; Mantl, Siegfried; Marcio, J; Fichtner, Paulo; Loo, Roger; Caymax, Matty (2004)