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Strain relaxation of SiGe/Si heterostructures by helium ionimplantation and subsequent annealing : Helium precipitates acting as dislocation sources

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1893 since deposited on 2021-10-16
Acq. date: 2026-09-14

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1893 since deposited on 2021-10-16
Acq. date: 2026-09-14

Citations