Publication:
Strain relaxation of SiGe/Si heterostructures by helium ionimplantation and subsequent annealing : Helium precipitates acting as dislocation sources
Date
Loading...
Journal
Abstract
Description
Metrics
Views
1891 since deposited on 2021-10-16
Acq. date: 2026-01-07
Citations
Metrics
Views
1891 since deposited on 2021-10-16
Acq. date: 2026-01-07
Citations