Browsing by author "Zhang, Jenny"
Now showing items 1-13 of 13
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Behavior of hot hole stressed SiO2/Si interface at elevated temperatures
Zhang, Jenny; Al-Kofahi, I. S.; Groeseneken, Guido (1998) -
Continuing degradation of the SiO2/Si interface after hot hole stress
Al-Kofahi, I. S.; Zhang, Jenny; Groeseneken, Guido (1997) -
Dependence of energy distributions of interface states on stress conditions
Zhang, Wenqi; Zhang, Jenny; Uren, M. J.; Groeseneken, Guido; Degraeve, Robin; Lalor, M.; Burton, D. (2001) -
Generation and annealing of hot hole induced interface states
Al-Kofahi, I. S.; Zhang, Jenny; Groeseneken, Guido (1997) -
Generation of hole traps in silicon dioxides
Zhang, Jenny; Sii, H. K.; Groeseneken, Guido; Degraeve, Robin (2001) -
Hole trapping and trap generation in the gate silicon dioxide
Zhang, Jenny; Sii, H. K.; Groeseneken, Guido; Degraeve, Robin (2001) -
Hot hole induced degradation of oxynitrides
Sii, H. K.; Zhang, Jenny; Groeseneken, Guido (1997) -
On the hot-hole induced post-stress interface trap generation in MOSFETs
Al-Kofahi, I. S.; Zhang, Jenny; Groeseneken, Guido (1996) -
On the interface states generated under different stress conditions
Zhang, Wenqi; Zhang, Jenny; Uren, M. J.; Groeseneken, Guido; Degraeve, Robin; Lalor, M.; Burton, D. (2001) -
On the mechanism of electron trap generation in gate oxides
Zhang, Wenqi; Zhang, Jenny; Lalor, M.; Burton, D.; Groeseneken, Guido; Degraeve, Robin (2001) -
Properties of electron traps generated in the gate oxide
Zhang, Wenqi; Zhang, Jenny; Lalor, M.; Burton, D.; Groeseneken, Guido; Degraeve, Robin (2001) -
Relation between hydrogen and the generation of interface state precursors
Sii, H. K.; Zhang, Jenny; Degraeve, Robin; Groeseneken, Guido (1999) -
The enhanced degradation of MOSFETs damaged by hot holes
Al-Kofahi, I. S.; Zhang, Jenny; Groeseneken, Guido (1996)