Browsing by author "Vitchev, R.G."

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Characterization of ultrathin high-k HfO2 layers grown on silicon: influence of the deposition parameters and interfacial layer

Houssiau, L.; Vitchev, R.G.; Pireaux, J.-J.; Conard, Thierry; Bender, Hugo (2004)
Effective attenuation length of Al Ka-excited Si2p photoelectrons in SiO2, Al2O3 and HfO2 thin films

Vitchev, R.G.; Defranoux, Chr; Wolstenholme, J; Conard, Thierry; Bender, Hugo; Pireaux, J.J. (2005)
Multitechnique characterisation of Al203 thin layers deposited on SiO2/Si surface by atomic layer chemical vapour deposition

Houssiau, L.; Vitchev, R.G.; Pireaux, J.J.; Conard, Thierry; Bender, Hugo; Richard, Olivier; Mack, P.; Wolstenholme, J.; Defranoux, C. (2003)
ToF-SIMS depth profiling of Hf and Al composition variations in ultrathin mixed HfO2/Al2O3 oxides

Houssiau, L.; Vitchev, R.G.; Conard, Thierry; Vandervorst, Wilfried; Bender, Hugo (2004)
Tof-SIMS depth profiling of Hf and Al composition variations in ultrathin mixed HfO2/Al2O3 oxides

Houssiau, L.; Vitchev, R.G.; Conard, Thierry; Vandervorst, Wilfried; Bender, Hugo (2003)
X-ray photoelectron spectroscopy characterisation of high-k dielectric Al2O3 and HfO2 layers deposited on SiO2/Si surface

Vitchev, R.G.; Pireaux, J.J.; Conard, Thierry; Bender, Hugo; Wolstenholme, J.; Defranoux, C. (2004)