Browsing by author "Van der Heyden, Nikolaas"
Now showing items 1-4 of 4
-
A Dy2O3-capped HfO2 dielectric and TaCx-based metals enabling low-Vt single-metal-single-dielectric gate stack
Chang, Vincent; Ragnarsson, Lars-Ake; Pourtois, Geoffrey; O'Connor, Robert; Adelmann, Christoph; Van Elshocht, Sven; Delabie, Annelies; Swerts, Johan; Van der Heyden, Nikolaas; Conard, Thierry; Cho, Hag-Ju; Akheyar, Amal; Mitsuhashi, Riichirou; Witters, Thomas; O'Sullivan, Barry; Pantisano, Luigi; Rohr, Erika; Lehnen, Peer; Kubicek, Stefan; Schram, Tom; De Gendt, Stefan; Absil, Philippe; Biesemans, Serge (2007) -
Oxygen-vacancy-induced Vt shift in La-containing devices
O'Sullivan, Barry; Mitsuhashi, Riichirou; Pourtois, Geoffrey; Chang, Vincent; Adelmann, Christoph; Schram, Tom; Ragnarsson, Lars-Ake; Van der Heyden, Nikolaas; Cho, Hag-Ju; Harada, Y.; Veloso, Anabela; O'Connor, Robert; Pantisano, Luigi; Yu, HongYu; Groeseneken, Guido; Absil, Philippe; Biesemans, Serge; Ikeda, Atsushi; Niwa, Masaaki (2007) -
Reliability study of La2O3 capped HfSiON high-permittivity n-type metal-oxide-semiconductor field-effect transistor devices with tantalum-rich electrodes
O'Sullivan, Barry; Mitsuhashi, Riichirou; Pourtois, Geoffrey; Aoulaiche, Marc; Houssa, Michel; Van der Heyden, Nikolaas; Schram, Tom; Harada, Yoshinao; Groeseneken, Guido; Absil, Philippe; Biesemans, Serge; Nakabayashi, Takashi; Ikeda, Atsushi; Niwa, Masaaki (2008) -
Work function (WF) simulations of Ta/HfO2, Ta2C/HfO2 and Ta2C/La2O3/HfO2 capped high-k stacks
Van der Heyden, Nikolaas; Pourtois, Geoffrey; De Gendt, Stefan; Heyns, Marc; Stesmans, Andre (2007)