Browsing by author "Wang, G."
Now showing items 1-8 of 8
-
Defect assessment and leakage control in Ge junctions
Gonzalez, M.B.; Simoen, Eddy; Eneman, Geert; De Jaeger, Brice; Wang, G.; Loo, Roger; Claeys, Cor (2014) -
In-Situ HCl etching of InP in shallow-trench-isolated structures
Orzali, Tommaso; Wang, G.; Waldron, Niamh; Merckling, Clement; Richard, Olivier; Bender, Hugo; Caymax, Matty (2011) -
In-Situ HCl etching of InP in shallow-trench-isolated structures
Orzali, Tommaso; Wang, G.; Waldron, Niamh; Richard, Olivier; Bender, Hugo; Wang, Wei-E; Caymax, Matty (2011) -
In-Situ HCl etching of InP in shallow-trench-isolated structures
Orzali, Tommaso; Wang, G.; Waldron, Niamh; Merckling, Clement; Richard, Olivier; Bender, Hugo; Wang, Wei-E; Caymax, Matty (2012) -
Integration of III-V on Si for high-mobility CMOS
Waldron, Niamh; Wang, G.; Nguyen, Ngoc Duy; Orzali, Tommaso; Merckling, Clement; Brammertz, Guy; Ong, Patrick; Winderickx, Gillis; Hellings, Geert; Eneman, Geert; Caymax, Matty; Meuris, Marc; Horiguchi, Naoto; Thean, Aaron (2012) -
Reduction of NiGe/n- and p-Ge specific contact resistivity by enhanced dopant segregation in the presence of carbon during nickel germanidation
Duan, N.; Luo, J.; Wang, G.; Liu, J.; Simoen, Eddy; Mao, S.; Radamson, H.; Wang, X.; Li, J.; Wang, W.; Zhao, C.; Ye, T. (2016) -
Selective area growth of InP on on-axis Si(001) substrates with low antiphase boundary formation
Loo, Roger; Wang, G.; Orzali, Tommaso; Waldron, Niamh; Merckling, Clement; Leys, Maarten; Richard, Olivier; Bender, Hugo; Eyben, Pierre; Vandervorst, Wilfried; Caymax, Matty (2011) -
Selective area growth of InP and defect elimination on Si (001) substrates
Loo, Roger; Wang, G.; Orzali, Tommaso; Waldron, Niamh; Merckling, Clement; Leys, Maarten; Richard, Olivier; Bender, Hugo; Eyben, Pierre; Vandervorst, Wilfried; Caymax, Matty (2011)