Browsing by author "Houssa, M."
Now showing items 1-6 of 6
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Computing elastic tensors of amorphous materials from first-principles
Pashartis, Christopher; van Setten, Michiel; Houssa, M.; Pourtois, Geoffrey (2024) -
Defect generation in ultrathin SiON/ZrO2 gate dielectric stacks
Houssa, M.; Autran, J.L.; Afanasiev, Valeri; Stesmans, Andre; Heyns, Marc (2002) -
Electronic structure of NiO layers grown on Al2O3 and SiO2 using metallo-organic chemical vapour deposition
Chou, H. Y.; Badylevich, M.; Afanas'ev, V. V.; Houssa, M.; Stesmans, A.; Meersschaut, Johan; Goux, Ludovic; Kittl, Jorge; Wouters, Dirk (2011-12) -
High-resolution electron spin resonance analysis of ion bombardment induced defects in advanced low-k insulators (k=2.0-2.5)
Afanasiev, Valeri; Nguyen, A.; Houssa, M.; Stesmans, Andre; Tokei, Zsolt; Baklanov, Mikhaïl (2013) -
Model for interface defect and positive charge generation in ultrathin SiO2/ZrO2 gate dielectric stacks
Houssa, M.; Autran, J.L.; Stesmans, Andre; Heyns, Marc (2002) -
Transitivity of band offsets between semiconductor heterojunctions and oxide insulators
Afanas'ev, V. V.; Chou, H.-Y.; Houssa, M.; Lamagna, L.; Lamperti, A.; Molle, A.; Vincent, Benjamin; Brammertz, Guy (2011)