Browsing by author "Wang, Pengfei"
Now showing items 1-4 of 4
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Impacts of through-silicon vias on total-ionizing-dose effects and low-frequency noise in FinFETs
Li, Kan; Zhang, Enxia; Gorchichko, Mariia; Wang, Pengfei; Hiblot, Gaspard; Jourdain, Anne; Van Huylenbroeck, Stefaan; Reed, Robert; Fleetwood, Daniel; Schrimpf, Ronald (2020) -
Total-ionizing-dose effects on InGaAs FinFETs with improved gate stack
Zhao, Simeng E.; Bonaldo, Stefano; Wang, Pengfei; Zhang, En Xia; Waldron, Niamh; Collaert, Nadine; Putcha, Vamsi; Linten, Dimitri; Gerardin, Simone; Paccagnella, Alessandro; Schrimpf, Ronald D.; Reed, Robert A.; Fleetwood, Daniel M. (2019) -
Total-ionizing-dose effects on InGaAs FinFETs with modified gate stack
Zhao, Simeng E.; Bonaldo, Stefano; Wang, Pengfei; Zhang, En Xia; Waldron, Niamh; Collaert, Nadine; Putcha, Vamsi; Linten, Dimitri; Gerardin, Simone; Paccagnella, Alessandro; Schrimpf, Ronald D.; Reed, Robert A.; Fleetwood, Daniel M. (2020-01) -
X-Ray and proton radiation effects on 40 nm CMOS physically unclonable function devices
Wang, Pengfei; Zhang, Enxia; Chuang, Kent; Liao, Wenjun; Gong, Huiqi; Wang, Pan; Arutt, Charles N; Ni, Kai; McCurdy, Mike; Verbauwhede, Ingrid; Bury, Erik; Linten, Dimitri; Fleetwood, Daniel; Schrimpf, Ron; Reed, Robert (2018)