Browsing by author "L'abbe, Caroline"
Now showing items 1-4 of 4
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Characterization of epitaxial Si:C:P and SI:P layers for source/drain formation in advanced bulk FinFETs
Rosseel, Erik; Profijt, Harald; Hikavyy, Andriy; Tolle, John; Kubicek, Stefan; Mannaert, Geert; L'abbe, Caroline; Wostyn, Kurt; Horiguchi, Naoto; Clarysse, Trudo; Parmentier, Brigitte; Dhayalan, Sathish Kumar; Bender, Hugo; Maes, Jan; Mehta, Sandeep; Loo, Roger (2014-10) -
Characterization of epitaxial Si:C:P and Si:P layers for source/drain formation in advanced bulk finFETs
Rosseel, Erik; Profijt, Harald; Hikavyy, Andriy; Tolle, John; Kubicek, Stefan; Mannaert, Geert; L'abbe, Caroline; Wostyn, Kurt; Horiguchi, Naoto; Clarysse, Trudo; Parmentier, Brigitte; Dhayalan, Sathish Kumar; Bender, Hugo; Maes, Jan Willem; Loo, Roger (2014-10) -
Growth and optimization of InGaN/InGaN multiple quantum wells by metal organic vapour phase epitaxy
Liang, Hu; Cheng, Kai; Zhang, Liyang; Leys, Maarten; Sijmus, Bram; L'abbe, Caroline; Dekoster, Johan; Borghs, Gustaaf (2011) -
Reduction of threading dislocation density in GaN grown on 200 mm Si (111) substrate with in-situ Si2H6 inter-treatment
Liang, Hu; Carlson, Eric; Zhao, Ming; Borniquel, Jose; Kang, SangWang; Jun, Sungwon; Rosseel, Erik; L'abbe, Caroline; Dekoster, Johan (2012)