Authors

Rosseel, Erik; Profijt, Harald; Hikavyy, Andriy; Tolle, John; Kubicek, Stefan; Mannaert, Geert; L'abbe, Caroline; Wostyn, Kurt; Horiguchi, Naoto; Clarysse, Trudo; Parmentier, Brigitte; Dhayalan, Sathish Kumar; Bender, Hugo; Maes, Jan; Mehta, Sandeep; Loo, Roger

Conference

SiGe, Ge, and Related Compounds 6: Materials, Processing, and Devices

Title

Characterization of epitaxial Si:C:P and SI:P layers for source/drain formation in advanced bulk FinFETs

Publication type

Proceedings paper