Publication:

Characterization of epitaxial Si:C:P and SI:P layers for source/drain formation in advanced bulk FinFETs

Date

2014-10

Proceedings Paper

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Author(s)

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Profijt, Harald

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Hikavyy, Andriy

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Kubicek, Stefan

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Mannaert, Geert

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L'abbe, Caroline

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;

Horiguchi, Naoto

;

Clarysse, Trudo

;

Parmentier, Brigitte

;

Dhayalan, Sathish Kumar

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