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Characterization of epitaxial Si:C:P and SI:P layers for source/drain formation in advanced bulk FinFETs
Publication:
Characterization of epitaxial Si:C:P and SI:P layers for source/drain formation in advanced bulk FinFETs
Date
2014-10
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Rosseel, Erik
;
Profijt, Harald
;
Hikavyy, Andriy
;
Tolle, John
;
Kubicek, Stefan
;
Mannaert, Geert
;
L'abbe, Caroline
;
Wostyn, Kurt
;
Horiguchi, Naoto
;
Clarysse, Trudo
;
Parmentier, Brigitte
;
Dhayalan, Sathish Kumar
;
Bender, Hugo
;
Maes, Jan
;
Mehta, Sandeep
;
Loo, Roger
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2015
since deposited on 2021-10-22
448
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Acq. date: 2025-10-25
Citations
Metrics
Views
2015
since deposited on 2021-10-22
448
item.page.metrics.field.last-week
Acq. date: 2025-10-25
Citations