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Characterization of epitaxial Si:C:P and SI:P layers for source/drain formation in advanced bulk FinFETs

Date

2014-10
Proceedings Paper
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dc.contributor.authorRosseel, Erik
dc.contributor.authorProfijt, Harald
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorTolle, John
dc.contributor.authorKubicek, Stefan
dc.contributor.authorMannaert, Geert
dc.contributor.authorL'abbe, Caroline
dc.contributor.authorWostyn, Kurt
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorClarysse, Trudo
dc.contributor.authorParmentier, Brigitte
dc.contributor.authorDhayalan, Sathish Kumar
dc.contributor.authorBender, Hugo
dc.contributor.authorMaes, Jan
dc.contributor.authorMehta, Sandeep
dc.contributor.authorLoo, Roger
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorMannaert, Geert
dc.contributor.imecauthorWostyn, Kurt
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorParmentier, Brigitte
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorMaes, Jan
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecWostyn, Kurt::0000-0003-3995-0292
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-22T05:17:07Z
dc.date.available2021-10-22T05:17:07Z
dc.date.issued2014-10
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24455
dc.identifier.url10.1149/06406.0977ecst
dc.source.beginpage977
dc.source.conferenceSiGe, Ge, and Related Compounds 6: Materials, Processing, and Devices
dc.source.conferencedate5/10/2014
dc.source.conferencelocationCancun Mexico
dc.source.endpage987
dc.title

Characterization of epitaxial Si:C:P and SI:P layers for source/drain formation in advanced bulk FinFETs

dc.typeProceedings paper
dspace.entity.typePublication
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