Browsing by author "O'Regan, Terrance"
Now showing items 1-5 of 5
-
Calculation of the electron mobility in III-V inversion layers with high-kappa dielectrics
O'Regan, Terrance; Soree, Bart; Fischetti, Massimo; Jin, S.; Magnus, Wim; Meuris, Marc (2010) -
Electron mobility calculations for Si, Ge and III-V inversion layers with HfO2
O'Regan, Terrance; Fischetti, Massimo; Soree, Bart; Magnus, Wim (2007) -
Electron mobility calculations for Si, Ge and III-V inversion layers with HfO2
O'Regan, Terrance; Fischetti, Massimo; Soree, Bart; Magnus, Wim (2007) -
Modeling the capacitance-voltage response of In0.53Ga0.47As MOS structures : charge quantization and nonparabolic corrections
O'Regan, Terrance; Hurley, Paul; Soree, Bart; Fischetti, Massimo (2010) -
Theory of hole mobility in strained Ge and III-V p-channel inversion layers with high-kappa insulators
Zhang, Yan; Fischetti, Massimo; Soree, Bart; O'Regan, Terrance (2010)