Browsing by author "Pochet, Sandrine"
Now showing items 1-6 of 6
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A high performance 0.18µm elevated source/drain technology with improved manufacturability
Augendre, Emmanuel; Rooyackers, Rita; Vandamme, Ewout; Perello, Carles; Van Dievel, Marc; Pochet, Sandrine; Badenes, Gonçal (1999) -
Determination of stress in shallow trench isolation for deep submicron MOS devices by UV Raman spectroscopy
Dombrowski, Kai; Fischer, A.; Dietrich, B.; De Wolf, Ingrid; Bender, Hugo; Pochet, Sandrine; Simons, Veerle; Rooyackers, Rita; Badenes, Gonçal; Stuer, Cindy; Van Landuyt, J. (1999) -
Elevated source/drain by sacrificial selective epitaxy for high performance deep submicron CMOS: process window versus complexity
Augendre, Emmanuel; Rooyackers, Rita; Caymax, Matty; Vandamme, Ewout; De Keersgieter, An; Perello, Carles; Van Dievel, Marc; Pochet, Sandrine; Badenes, Gonçal (2000) -
L-shape spacer architecture for low cost, high performance CMOS
Augendre, Emmanuel; Perello, Carles; Vandamme, Ewout; Pochet, Sandrine; Rooyackers, Rita; Beckx, Stephan; de Potter de ten Broeck, Muriel; Lauwers, A.; Badenes, Gonçal (2001) -
Optimisation of active area edge protection in shallow trench isolation
Augendre, Emmanuel; Rooyackers, Rita; Pochet, Sandrine; Grau, Lluis; Sleeckx, Erik; Vandamme, Ewout; Badenes, Gonçal (2001) -
Optimisation of critical parameters in a low cost, high performance deep submicron CMOS technology
Badenes, Gonçal; Perello, Carles; Rupp, Andreas; Vandamme, Ewout; Augendre, Emmanuel; Pochet, Sandrine; Deferm, Ludo (1999)