Browsing by author "Leys, Maarten"
Now showing items 61-80 of 122
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High quality GaN grown on silicon(111) using a SixNy interlayer by metal-organic vapor phase epitaxy
Cheng, Kai; Leys, Maarten; Degroote, Stefan; Germain, Marianne; Borghs, Gustaaf (2008) -
High temperature on- and off-state stress of GaN-on- Si HEMTs with in-situ Si3N4 cap layer
Marcon, Denis; Medjdoub, Farid; Visalli, Domenica; Van Hove, Marleen; Derluyn, Joff; Das, Jo; Degroote, Stefan; Leys, Maarten; Cheng, Kai; Decoutere, Stefaan; Mertens, Robert; Germain, Marianne; Borghs, Gustaaf (2010) -
Hydrogen and inert species in solid phase epitaxy
Lieten, Ruben; Degroote, Stefan; Clemente, Francesca; Leys, Maarten; Borghs, Gustaaf (2010) -
III-Nitrides electronics at IMEC: latest developments on SiC and large diameter Si substrates
Germain, Marianne; Degroote, Stefan; Derluyn, Joff; Leys, Maarten; Das, Jo; Motsnyi, Vasyl; Van Hove, Marleen; Cheng, Kai; Lorenz, Anne; Xiao, Dongping; Borghs, Gustaaf (2007) -
Improvement of AlGaN/GaN high electron mobility transistor structures by in situ deposition of a Si3N4 layer
Derluyn, Joff; Boeykens, Steven; Cheng, Kai; Vandersmissen, Raf; Das, Johan; Ruythooren, Wouter; Degroote, Stefan; Leys, Maarten; Germain, Marianne; Borghs, Gustaaf (2005-09) -
Improvement of ohmic contacts on AlGaN/GaN HEMT's by using in-situ Si3N4 passivation layer
Derluyn, Joff; Van Daele, Benny; Boeykens, Steven; Cheng, Kai; Ruythooren, Wouter; Leys, Maarten; Germain, Marianne; Van Tendeloo, Gustaaf; Borghs, Gustaaf (2005-06) -
In situ bow monitoring: towards uniform blue and green InGaN/GaN quantum well structures grown on 100mm sapphire substrates by MOVPE
Cheng, Kai; Degroote, Stefan; Leys, Maarten; Zhang, Liyang; Derluyn, Joff; Germain, Marianne; Borghs, Gustaaf (2009) -
In situ bow monitoring: towards uniform blue and green InGaN/GaN quantum well structures grown on 100mm sapphire substrates by MOVPE
Cheng, Kai; Degroote, Stefan; Leys, Maarten; Zhang, Liyang; Derluyn, Joff; Germain, Marianne; Borghs, Gustaaf (2010) -
In situ-grown ultra-thin Si3N4 passivation and gate dielectric layers for AlGaN/GaN insulating gate HFET
Wang, Wenfei; Derluyn, Joff; Leys, Maarten; Germain, Marianne; Schreurs, Dominique; Borghs, Gustaaf (2005) -
In-situ passivation combined with GaN buffer optimization for extremely low current dispersion and low gate leakage in Si3N4/AlGaN/GaN HEMT devices on Si (111)
Germain, Marianne; Cheng, Kai; Derluyn, Joff; Degroote, Stefan; Das, Jo; Lorenz, Anne; Marcon, Denis; Van Hove, Marleen; Leys, Maarten; Borghs, Gustaaf (2008) -
Indium rich III-nitrides on Germanium by molecular beam epitaxy
Lieten, Ruben; Tseng, Peter; Leys, Maarten; Locquet, Jean-Pierre; Dekoster, Johan (2011) -
Influence of AlGaN nucleation layers on structural and electrical properties of GaN on 4H-SiC
Boeykens, Steven; Leys, Maarten; Germain, Marianne; Belmans, Ronnie; Borghs, Gustaaf (2004-12) -
Influence of growth parameters on Mg doping of GaN by molecular beam epitaxy
Lieten, Ruben; Motsnyi, Vasyl; Zhang, Liyang; Cheng, Kai; Leys, Maarten; Degroote, Stefan; Germain, Marianne; Borghs, Gustaaf (2010) -
Interface of GaN grown on Ge(111) by plasma assisted molecular beam epitaxy
Lieten, Ruben; Richard, Olivier; Degroote, Stefan; Leys, Maarten; Bender, Hugo; Borghs, Gustaaf (2011) -
Interlayer techniques applied in GaN growth on silicon(111) by MOVPE
Cheng, Kai; Leys, Maarten; Degroote, Stefan; Sijmus, Bram; Germain, Marianne; Borghs, Gustaaf (2007) -
Investigation of light-induced deep-level defect activation at the AlN/Si interface
Visalli, Domenica; Van Hove, Marleen; Leys, Maarten; Derluyn, Joff; Simoen, Eddy; Srivastava, Puneet; Geens, Karen; Degroote, Stefan; Germain, Marianne; Nguyen, Anh Phuc Duc; Stesmans, Andre; Borghs, Gustaaf (2011) -
Large-area, catalyst-free heteroepitaxy of InAs nanowires on Si by MOVPE
Cantoro, Mirco; Wang, Gang; Lin, Dennis; Klekachev, Alexander; Richard, Olivier; Bender, Hugo; Kim, Tae-Gon; Clemente, Francesca; Adelmann, Christoph; van der Veen, Marleen; Brammertz, Guy; Degroote, Stefan; Leys, Maarten; Caymax, Matty; Heyns, Marc; De Gendt, Stefan (2011) -
Limitations of field plate effect due to the silicon substrate in AlGaN/GaN/AlGaN DHFETs
Visalli, Domenica; Van Hove, Marleen; Derluyn, Joff; Srivastava, Puneet; Marcon, Denis; Das, Jo; Leys, Maarten; Degroote, Stefan; Cheng, Kai; Vandenplas, Erwin; Germain, Marianne; Borghs, Gustaaf (2010) -
Low leakage high breakdown E-mode GaN DHFET on Si by selective removal of in-situ grown Si3N4
Derluyn, Joff; Van Hove, Marleen; Visalli, Domenica; Lorenz, Anne; Marcon, Denis; Srivastava, Puneet; Geens, Karen; Sijmus, Bram; Viaene, John; Kang, Xuanwu; Das, Jo; Medjdoub, Farid; Cheng, Kai; Degroote, Stefan; Leys, Maarten; Borghs, Gustaaf; Germain, Marianne (2009-12) -
Low on-resistance high-breakdown normally off AlN/GaN/AlGaN DHFET on Si substrate
Medjdoub, Farid; Derluyn, Joff; Cheng, Kai; Leys, Maarten; Degroote, Stefan; Marcon, Denis; Visalli, Domenica; Van Hove, Marleen; Germain, Marianne; Borghs, Gustaaf (2010)