Browsing by author "Fabris, Elena"
Now showing items 1-5 of 5
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1.2 kV Enhancement-Mode p-GaN Gate HEMTs on 200 mm Engineered Substrates
Kumar, Sujit; Geens, Karen; Vohra, Anurag; Wellekens, Dirk; Cingu, Deepthi; Fabris, Elena; Cosnier, Thibault; Hahn, H.; Bakeroot, Benoit; Posthuma, Niels; Langer, Robert; Decoutere, Stefaan (2024) -
200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICs
Cosnier, Thibault; Syshchyk, Olga; De Jaeger, Brice; Geens, Karen; Cingu, Deepthi; Fabris, Elena; Borga, Matteo; Vohra, Anurag; Zhao, Ming; Bakeroot, Benoit; Wellekens, Dirk; Magnani, Alessandro; Vudumula, Pavan; Chatterjee, Urmimala; Langer, Robert; Decoutere, Stefaan (2021) -
Modeling Gate Leakage Current for p-GaN Gate HEMTs With Engineered Doping Profile
Alaei, Mojtaba; Borga, Matteo; Fabris, Elena; Decoutere, Stefaan; Lauwaert, Johan; Bakeroot, Benoit (2024) -
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability
Stoffels, Steve; Posthuma, Niels; Decoutere, Stefaan; Bakeroot, Benoit; Tallarico, Andrea Natale; Sangiorgi, Enrico; Fiegna, Claudio; Zheng, Jiaxin; Ma, X.; Borga, Matteo; Fabris, Elena; Meneghini, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio; Priesol, Juraj; Satka, Alexander (2019-04) -
Vertical stack reliability of GaN-on-Si buffers for low-voltage applications
Meneghini, M.; Meneghesso, G.; Zanoni, E.; Fabris, Elena; Borga, Matteo; Posthuma, Niels; Zhao, Ming; De Jaeger, Brice; You, Shuzhen; Decoutere, Stefaan (2021)