Browsing by author "Slotte, Jonatan"
Now showing items 1-12 of 12
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A demonstration of donor passivation through direct formation of V-Asx complexes in GexSn1-x
Khanam, Afrina; Vohra, Anurag; Slotte, Jonatan; Makkonen, Ilja; Loo, Roger; Pourtois, Geoffrey; Vandervorst, Wilfried (2020-05) -
Compensating defects in epitaxial Ge and GexSn1-x
Slotte, Jonatan; Khanam, Afrina; Vohra, Anurag; Makkonen, Ilja; Loo, Roger; Pourtois, Geoffrey; Porret, Clément; Vandervorst, Wilfried (2019) -
Evolution of phosphorus-vacancy clusters in germanium
Vohra, Anurag; Khanam, Afrina; Slotte, Jonatan; Makkonen, Ilja; Pourtois, Geoffrey; Loo, Roger; Vandervorst, Wilfried (2019-01) -
Evolution of phosphorus-vacancy clusters in germanium
Vohra, Anurag; Khanam, Afrina; Slotte, Jonatan; Makkonen, Ilja; Loo, Roger; Pourtois, Geoffrey; Vandervorst, Wilfried (2018) -
Heavily phosphorus doped germanium: strong relationship of phosphorus with vacancies and impact of Sn alloying on doping activation
Vohra, Anurag; Khanam, Afrina; Slotte, Jonatan; Makkonen, Ilja; Pourtois, Geoffrey; Porret, Clément; Loo, Roger; Vandervorst, Wilfried (2019) -
Interplay of Sn, P and vacancies in the Ge lattice
Vohra, Anurag; Pourtois, Geoffrey; Slotte, Jonatan; Kohen, David; Loo, Roger; Vandervorst, Wilfried (2017-09) -
Manifestation of vacancy-As complexes in As doped GeSn epilayers
Khanam, Afrina; Slotte, Jonatan; Vohra, Anurag; Loo, Roger; Pourtois, Geoffrey; Vandervorst, Wilfried (2018) -
On the evolution of strain and electrical properties in as-grown and annealed Si:P epitaxial films for source-drain stressor applications
Dhayalan, Sathish Kumar; Kujala, Jiri; Slotte, Jonatan; Pourtois, Geoffrey; Simoen, Eddy; Rosseel, Erik; Hikavyy, Andriy; Shimura, Yosuke; Loo, Roger; Vandervorst, Wilfried (2018-04) -
On the manifestation of phosphorus-vacancy complexes in epitaxial Si:P films
Dhayalan, Sathish Kumar; Kujala, Jiri; Slotte, Jonatan; Pourtois, Geoffrey; Simoen, Eddy; Rosseel, Erik; Hikavyy, Andriy; Shimura, Yosuke; Iacovo, Serena; Stesmans, Andre; Loo, Roger; Vandervorst, Wilfried (2016) -
Open volume defects in ultra-thin TiO2 layers embedded in VMCO-like samples studied with positron annihilation spectroscopy
Khanam, Afrina; Slotte, Jonatan; Tuomisto, Filip; Subhechha, Subhali; Popovici, Mihaela Ioana; Kar, Gouri Sankar (2022) -
Positron annihilation spectroscopy on open-volume defects in group IV semiconductors
Slotte, Jonatan; Tuomisto, F; Kujala, J.; Holm, A.M.; Segercranz, N.; Kilpelainen, S.; Kuitunen, K.; Simoen, Eddy; Gencarelli, Federica; Loo, Roger; Shimura, Yosuke (2014-09) -
Source/drain materials for Ge nMOS devices: phosphorus activation in epitaxial Si, Ge, Ge1xSnx and SiyGe1xySnx
Vohra, Anurag; Makkonen, Ilja; Pourtois, Geoffrey; Slotte, Jonatan; Porret, Clément; Rosseel, Erik; Khanam, Afrina; Tirrito, Matteo; Douhard, Bastien; Loo, Roger; Vandervorst, Wilfried (2020-05)